Sanyo FX605 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4888
FX605
Features
· Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX605 is formed with two chips, each being equivalent to the 2SJ190, placed in one package.
· Matched pair characteristics.
Switching Time Test CIrcuit
Package Dimensions
unit:mm
2120
[FX605]
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1
SANYO:XP6 (Bottom view)
Electrical Connection
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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erutarepmeTegarotSgtsT 051+ot55–
· Marking:605
D
PD
P
D
P
D T
(Top view)
SSD SSG
WP elcycytud,sµ01 %14–A
Tc=25˚C, 1unit Mounted on ceramic board (750mm Mounted on ceramic board (750mm
2
×0.8mm) 1unit
2
×0.8mm)
Continued on next page.
06–V 51±V 1–A
6W
5.1W 2W
˚C ˚C
52098HA (KT)/71095MO(KOTO) TA-0111 No.4888-1/4
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX605
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ecnattimdArefsnarTdrawroFY|sf|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R R
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ecnaticapaCrefsnarTesreveR
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emiTesiR
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t
t
V
I
SSD)RB(
D
V
SSD SSG
ssiCV
ssrCV
t
r
t
f
DS
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
I
)no(SD
D
SD
ssoCV
SD SD
)no(d
)ffo(d
I
S
V,Am1–=
0=06–V
SG
V,V06–=
0=001–Aµ
SG
V,21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D D
V,Am005–= V,Am005–=
V,A1–=
SG
Am005–=6.00.1S V01–=9.02.1
SG
V4–=2.16.1
SG
zHM1=f,V02–=061Fp zHM1=f,V02–=06Fp zHM1=f,V02–=01Fp
tiucriCtseTdeificepSeeS01sn tiucriCtseTdeificepSeeS31sn tiucriCtseTdeificepSeeS07sn tiucriCtseTdeificepSeeS03sn
0=9.0–V
sgnitaR
nimpytxam
tinU
Ω Ω
No.4888-2/4
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