SANYO FX601 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4884
FX601
Features
· Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive.
· Facilitates high-density mounting.
· Tth FX601 is formed with two chips, each being equivalent to the 2SJ316, placed in one package.
· Matched pair characteristics.
Switching Time T est CIrcuit
Package Dimensions
unit:mm
2120
[FX601]
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1
SANYO:XP6 (Bottom view)
Electrical Connection
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
SSD SSG
D
P P
WP elcycytud,sµ01 %14–A
PD
Tc=25˚C, 1unit
D
Mounted on ceramic board (750mm
D
Mounted on ceramic board (750mm
T
2
×0.8mm) 1unit
2
×0.8mm)
· Marking:601 Continued on next page.
21–V 21±V 1–A
6W
5.1W 2W
˚C ˚C
52098HA (KT)/71095MO(KOTO) TA-0107 No.4884-1/4
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX601
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tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R R
ecnaticapaCtupnI
ecnaticapaCtuptuO
ecnaticapaCrefsnarTesreveR
emiTyaleDNO-nruT
emiTesiR
emiTyaleDFFO-nruT
emiTllaF
egatloVdrawroFedoiD
t
t
V
I
SSD)RB(
D
V
SSD SSG
ssiCV
ssrCV
t
r
t
f
DS
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
I
)no(SD
D
SD
ssoCV
SD SD
)no(d
)ffo(d
I
S
V,Am1–=
0=21–V
SG
V,V21–=
0=001–Aµ
SG
V,21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D D
V,Am005–= V,Am005–=
V,A1–=
SG
Am005–=7.02.1S V01–=3.024.0
SG
V4–=54.036.0
SG
zHM1=f,V01–=071Fp zHM1=f,V01–=071Fp zHM1=f,V01–=04Fp
tiucriCtseTdeificepSeeS01sn tiucriCtseTdeificepSeeS41sn tiucriCtseTdeificepSeeS07sn tiucriCtseTdeificepSeeS04sn
0=9.0–V
sgnitaR
nimpytxam
tinU
Ω Ω
No.4884-2/4
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