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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Ordering number:EN5029
FX509
Features
· Composite type with 2PNP transistors contained in
one package, facilitating high-density mounting.
· The FX509 houses two chips, each being equivalent
to the 2SB1215, in one package.
· Matched pair characteristics.
Switching Time T est CIrcuit
Package Dimensions
unit:mm
2118
[FX509]
1:Base1
2:Emitter1
3:Emitter2
4:Base2
5:Collector2
6:Collector1
SANYO:XP6
(Bottom view)
Electrical Connection
1:Base1
2:Emitter1
3:Emitter2
4:Base2
5:Collector2
6:Collector1
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on ceramic board (750mm
C
Mounted on ceramic board (750mm
T
2
×0.8mm) 1unit
2
×0.8mm)
· Marking:509 Continued on next page.
021–V
001–V
6–V
3–A
6–A
6.0–A
5.1W
2W
˚C
˚C
52098HA (KT)/42695MO (KOTO) TA-0095 No.5029-1/4
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Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
FX509
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
hEF1VECI,V5–=
hEF2VECI,V5–=
V
OBC
OBE
T
no
gts
f
BC
V
BE
V
/llams(EF
EC
)egral
V
EC
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V001–=
0=1–Aµ
E
I,V4–=
0=1–Aµ
C
C
C
I,V5–=
C
I,V5–=
C
I,A5.1–=
B
I,A5.1–=
B
I,Aµ01–=
E
R,Am1–=
I,Aµ01–=
C
Am005––=041004
A2–=04
Am005–=8.0
Am005–=081zHM
zHM1=f,V01–=04Fp
Am051–=002–005–Vm
Am051–=9.0–2.1–V
0=021–V
=∞ 001–V
EB
0=6–V
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tiucriCtseTdeificpeseeS05sn
sgnitaR
nimpytxam
tinU
No.5029-2/4