SANYO FX501 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Ordering number:EN4877

FX501

Features

· Composite type with 2 PNP transistors contained in
one package, facilitating high-density mounting.

· The FX501 houses two chips, each being equivalent
to the 2SB1205, in one package.

Package Dimensions

unit:mm

2118

[FX501]

· Matched pair characteristics.

Switching Time T est CIrcuit Electrical Connection

1:Base1
2:Emitter1
3:Emitter2
4:Base2
5:Collector2
6:Collector1

1:Base1
2:Emitter1
3:Emitter2
4:Base2
5:Collector2
6:Collector1

SANYO:XP6
(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

noitapissiDlatoTP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot05–

· Marking:501

C

PC

B

C
T

OBC
OEC
OBE

Mounted on ceramic board (750mm
Mounted on ceramic board (750mm

(Top view)

2

×0.8mm) 1 unit

2

×0.8mm)

52–V
02–V
5–V
5–A
8–A
1–A

5.1W
2W

˚C
˚C

Continued on next page.

52098HA (KT)/42695MO (KOTO) BX-1388 No.4877-1/4

FX501

Continued from preceding page.

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

oitaRniaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOboCV

egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV

egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV

emiTNO-nruTt

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emiTllaFt

hEF1VECI,V2–=
hEF2VECI,V2–=

h

V

OBC

V

OBE

V

/llams(EF

)egral

V

T

I

)tas(EC

C

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

no

f

I,V02–=

BC
BE

EC

EC
BC

0=005–An

E

I,V4–=

0=005–An

C
C
C

I,V2–=

C

I,V5–=

C

I,A3–=

B

I,A3–=

B

I,Aµ01–=

E

R,Am1–=

I,Aµ01–=

C

Am005–=041004

A4–=06

Am005–=8.0

Am005–=053zHM

zHM1=f,V01–=06Fp
Am06–=052–005–Vm
Am06–=0.1–3.1–V

0=52–V

=∞ 02–V

EB

0=5–V

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sgnitaR

nimpytxam

tinU

No.4877-2/4