SANYO FX401 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter
Ordering number:EN5028
FX401
Features
· Complex type of a low saturation voltage, high speed
switching and large current PNP transistor and a fast
recovery and low forward voltage Shottky barrier
Package Dimensions
unit:mm
2123
diode facilitating high-density mounting,
· The FX401 is composed on 2chips, one being
equivalent to the 2SB1121 and the other the SB3003P, placed in one package.
Electrical Connection
1:Base
2:Emitter
3:No Contact
4:Anode
5, 6:Common
(Collector, Cathode)
(Top view)
Switching Time T est CIrcuit T rr Test Circuit
[FX401]
1:Base
2:Emitter
3:No Contact
4:Anode
5:Common
(Collector, Cathode)
6:Common
(Collector, Cathode)
SANYO:XP5
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on ceramic board (750mm
C
MRR
MSR
O
MSF
2
×0.8mm)
elcyc1,evaweniszH05 01A
· Marking:401
52098HA (KT)/41095TS (KOTO) TA-0087 No.5028-1/4
03–V
52–V
6–V
2–A
5–A
004–Am
5.1W
˚C
03V
53V
3A
˚C
˚C
Continued on next page.
FX401
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificpeseeS053sn
emiTllaFt
)tnemelerepeulaV(]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRrrtIFI=
ecnatsiseRlamrehTa-jhtR 58
hEF1VECI,V2–=
hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OBC)RB(
C
I
OBE)RB(
E
no
f
IRAm1=03V
R
IFA3= 55.0V
F
VRV51= 002Aµ
R
R
Mounted on ceramic board (750mm
I,V02–=
BC
BE
EC
EC
R
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C
C
C
I,A5.1–=
B
I,A5.1–=
B
I,Aµ01–=
E
R,Aµ01–=
I,Aµ01–=
C
Am001–=041004
A5.1–=56
I,V01–=
C
Am002–=023zHM
zHM1=f,V01–=23Fp
Am57–=053–006–V
Am57–=0.1–3.1–V
0=03–V
=∞ 52–V
EB
0=6–V
tiucriCtseTdeificpeseeS06sn
tiucriCtseTdeificpeseeS52sn
zHM1=f,V01=061Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am003= 03sn
2
×0.8mm)
tinU
˚C/W
No.5028-2/4
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