SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
Very High-Speed Switching Applications
Ordering number:EN5051
FX208
Features
· Low ON-resistance.
· Very high-speed switching.
· 2.5V drive.
Swithing Time T est CIrcuit
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
P
D
P
D
Package Dimensions
unit:mm
2121
[FX208]
1:No Contact
2:Gate
3:Source
4:No Contact
5:Drain
6:Drain
SANYO:XP5
(Bottom view)
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %161A
Tc=25˚C
Mounted on ceramic board (750mm
2
×0.8mm)
02V
01±V
4A
8W
2W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=02V
SG
V,V61=
SD
SG
SD
V,A2=
V,A1=
SD
SD
SD
V,A4=
0=001Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=5.05.1V
D
A2=5.35 S
D
V4=5658mΩ
SG
V5.2=58521mΩ
SG
zHM1=f,V01=004Fp
zHM1=f,V01=003Fp
zHM1=f,V01=061Fp
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS001sn
tiucriCtseTdeificepseeS021sn
0=0.12.1V
SG
nimpytxam
· Marking:208
52098HA (KT)/42895MO (KOTO) TA-0133 No.5051-1/3
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