SANYO FX207 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

P-Channel Silicon MOSFET

Very High-Speed Switching Applications

Ordering number:EN5050

FX207

Features

· Low ON-resistance.

· Very high-speed switching.

· 2.5V drive.

Switching Time T est CIrcuit

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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erutarepmeTegarotSgtsT 051+ot55–

D

PD

P

D

P

D

Package Dimensions

unit:mm

2121

[FX207]

1:No Contact
2:Gate
3:Source
4:No Contact
5:Drain
6:Drain

SANYO:XP5
(Bottom view)

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %161–A

Tc=25˚C
Mounted on ceramic board (750mm

2

×0.8mm)

21–V
01±V
4–A

8W
2W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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ecnattimdArefsnarTdrawroFY|sf|VSDI,V6–=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatS

R
R

ecnaticapaCtupnIssiCV

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I

SSD)RB(

D

V

SSD

V

SSG

V

)ffo(SG

I

)no(SD

D

I

)no(SD

D

)no(d

r

)ffo(d

f

I

DS

S

V,Am1–=

0=21–V

SG

V,V01–=

SD
SG
SD

V,A2–=
V,A1–=

SD
SD
SD

V,A4–=

0=001–Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V6–=

Am1–=5.0–5.1–V

D

A1–=5.24 S

D

V4–=531771mΩ

SG

V5.2–=581003mΩ

SG

zHM1=f,V6–=004Fp
zHM1=f,V6–=073Fp
zHM1=f,V6–=061Fp

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tiucriCtseTdeificepseeS021sn
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0=0.1–2.1–V

SG

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· Marking:207

52098HA (KT)/42895MO (KOTO) TA-0132 No.5050-1/3

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FX207

No.5050-2/3