SANYO FX205 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOSFET
Very High-Speed Switching Applications
Ordering number:EN4917
FX205
Features
· Low ON-resistance.
· Very high-speed switching.
· Low-voltage drive.
Switching Time T est CIrcuit
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
P
D
P
D
Package Dimensions
unit:mm
2121
[FX205]
1:No Contact
2:Gate
3:Source
4:No Contact
5:Drain
6:Drain
SANYO:XP5
(Bottom view)
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %18–A
Tc=25˚C
Mounted on ceramic board (750mm
2
×0.8mm)
06–V
52±V
2–A
8W
2W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBS-GV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
I
SSD)RB(
D
I
SSG)RB(
G
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=06–V
SG
V,sµ001±=
0=52±V
SD
V,V06–=
SD
SG
SD
SD
SD
SD
0=001–Aµ
SG
V,V02±=
0=01±Aµ
SD
I,V01–=
Am1–=5.1–5.2–V
D
A1–=2.12 S
D
V,A1–=
V,A1–=
V,A2–=
V01–=003004mΩ
SG
V4–=054056mΩ
SG
zHM1=f,V02–=042Fp
zHM1=f,V02–=051Fp
zHM1=f,V02–=04Fp
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS61sn
tiucriCtseTdeificepseeS58sn
tiucriCtseTdeificepseeS55sn
0=0.1–5.1–V
SG
nimpytxam
· Marking:205
52098HA (KT)/42895MO (KOTO) BX-1506 No.4917-1/3
sgnitaR
tinU
FX205
No.4917-2/3
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