SANYO FX203 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN5264
FX203
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
Switching Time T est CIrcuit
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
P
D
P
D
Package Dimensions
unit:mm
2121
[FX203]
1:No Contact
2:Gate
3:Source
4:No Contact
5:Drain
6:Drain
SANYO:XP5
(Bottom view)
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %161–A
Tc=25˚C
Mounted on ceramic board (750mm
2
×0.8mm)
03–V
02±V
4–A
8W
2W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
SD
V,A2–=
V,A2–=
SD
SD
SD
V,A4–=
0=001–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–5.2–V
D
A2–=5.13 S
D
V01–=021061mΩ
SG
V4–=012092mΩ
SG
zHM1=f,V01–=073Fp
zHM1=f,V01–=032Fp
zHM1=f,V01–=07Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS531sn
tiucriCtseTdeificepseeS521sn
0=0.1–2.1–V
SG
nimpytxam
· Marking:203
52098HA (KT)/O2196YK (KOTO) TA-0041 No.5264-1/3
sgnitaR
tinU
FX203
No.5264-2/3
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