Sanyo FW352 Specifications
Ordering number : ENN7217
FW352
N-Channel and P-Channel Silicon MOSFET
FW352
Ultrahigh-Speed Switching Applications
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•Dual chip device with both a p-channel and an n- channel MOSFETs encapsulated in one package for high-density mounting.
•High-density mounting.
•Excellent ON-resistance characteristic.
Specifications
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm
2129
[FW352]
8 |
5 |
4.4
1 |
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4 |
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5.0 |
1.8max |
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1.5 |
0.595 |
1.27 |
0.43 |
0.1 |
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0.3 |
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6.0 |
1 |
: Source1 |
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2 |
: Gate1 |
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3 |
: Source2 |
0.2 |
4 |
: Gate2 |
5 |
: Drain2 |
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6 |
: Drain2 |
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7 |
: Drain1 |
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8 |
: Drain1 |
SANYO : SOP8
Parameter |
Symbol |
Conditions |
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Ratings |
Unit |
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N-channel |
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P-channel |
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Drain-to-Source Voltage |
VDSS |
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60 |
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--60 |
V |
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Gate-to-Source Voltage |
VGSS |
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±20 |
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±20 |
V |
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Drain Current (DC) |
ID |
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4 |
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--2.4 |
A |
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Drain Current (Pulse) |
IDP |
PW£10ms, duty cycle£1% |
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48 |
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--32 |
A |
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Allowable Power Dissipation |
PD |
Mounted on a ceramic board (1200mm2 0.8mm)1unit |
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1.7 |
W |
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Total Dissipation |
PT |
Mounted on a ceramic board (1200mm2 0.8mm) |
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2.0 |
W |
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Channel Temperature |
Tch |
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150 |
°C |
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Storage Temperature |
Tstg |
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--55 to +150 |
°C |
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Electrical Characteristics at Ta=25°C |
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Parameter |
Symbol |
Conditions |
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Ratings |
Unit |
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min |
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typ |
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max |
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[N-channel] |
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Drain-to-Source Breakdown Voltage |
V(BR)DSS |
ID=1mA, VGS=0 |
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60 |
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V |
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Zero-Gate Voltage Drain Current |
IDSS |
VDS=60V, VGS=0 |
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10 |
mA |
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Gate-to-Source Leakage Current |
IGSS |
VGS=±16V, VDS=0 |
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±10 |
mA |
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Cutoff Voltage |
VGS(off) |
VDS=10V, ID=1mA |
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1.0 |
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2.4 |
V |
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Forward Transfer Admittance |
½yfs½ |
VDS=10V, ID=4A |
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5 |
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7 |
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S |
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Marking : W352 |
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Continued on next page. |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72602 TS IM TA-100006 No.7217-1/6
FW352
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Static Drain-to-Source On-State Resistance |
RDS(on)1 |
ID=4A, VGS=10V |
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70 |
90 |
mW |
RDS(on)2 |
ID=2A, VGS=4V |
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90 |
125 |
mW |
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Input Capacitance |
Ciss |
VDS=20V, f=1MHz |
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350 |
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pF |
Output Capacitance |
Coss |
VDS=20V, f=1MHz |
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110 |
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pF |
Reverse Transfer Capacitance |
Crss |
VDS=20V, f=1MHz |
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35 |
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pF |
Turn-ON Delay Time |
td(on) |
See specified Test Circuit. |
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9 |
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ns |
Rise Time |
tr |
See specified Test Circuit. |
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40 |
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ns |
Turn-OFF Delay Time |
td(off) |
See specified Test Circuit. |
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40 |
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ns |
Fall Time |
tf |
See specified Test Circuit. |
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55 |
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ns |
Total Gate Charge |
Qg |
VDS=10V, VGS=10V, ID=4A |
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12 |
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nC |
Gate-to-Source Charge |
Qgs |
VDS=10V, VGS=10V, ID=4A |
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2 |
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nC |
Gate-to-Drain “Miller” Charge |
Qgd |
VDS=10V, VGS=10V, ID=4A |
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3 |
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nC |
Diode Forward Voltage |
VSD |
IS=4A, VGS=0 |
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0.81 |
1.2 |
V |
[P-channel] |
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Drain-to-Source Breakdown Voltage |
V(BR)DSS |
ID=--1mA, VGS=0 |
--60 |
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V |
Zero-Gate Voltage Drain Current |
IDSS |
VDS=--60V, VGS=0 |
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--10 |
mA |
Gate-to-Source Leakage Current |
IGSS |
VGS=±16V, VDS=0 |
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±10 |
mA |
Cutoff Voltage |
VGS(off) |
VDS=--10V, ID=--1mA |
--1.0 |
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--2.4 |
V |
Forward Transfer Admittance |
½yfs½ |
VDS=--10V, ID=--2.4A |
3.2 |
4.6 |
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S |
Static Drain-to-Source On-State Resistance |
RDS(on)1 |
ID=--2.4A, VGS=--10V |
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165 |
215 |
mW |
RDS(on)2 |
ID=--1.2A, VGS=--4V |
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230 |
320 |
mW |
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Input Capacitance |
Ciss |
VDS=--20V, f=1MHz |
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440 |
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pF |
Output Capacitance |
Coss |
VDS=--20V, f=1MHz |
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110 |
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pF |
Reverse Transfer Capacitance |
Crss |
VDS=--20V, f=1MHz |
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33 |
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pF |
Turn-ON Delay Time |
td(on) |
See specified Test Circuit. |
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10 |
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ns |
Rise Time |
tr |
See specified Test Circuit. |
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24 |
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ns |
Turn-OFF Delay Time |
td(off) |
See specified Test Circuit. |
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50 |
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ns |
Fall Time |
tf |
See specified Test Circuit. |
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40 |
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ns |
Total Gate Charge |
Qg |
VDS=--10V, VGS=--10V, ID=--2.4A |
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14 |
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nC |
Gate-to-Source Charge |
Qgs |
VDS=--10V, VGS=--10V, ID=--2.4A |
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2 |
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nC |
Gate-to-Drain “Miller” Charge |
Qgd |
VDS=--10V, VGS=--10V, ID=--2.4A |
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3.7 |
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nC |
Diode Forward Voltage |
VSD |
IS=--2.4A, VGS=0 |
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--0.81 |
--1.2 |
V |
Electrical Connection
8 |
7 |
6 |
5 |
1 |
2 |
3 |
4 |
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
(Top view)
Switching Time Test Circuit |
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[N-channel] |
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[P-channel] |
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VIN |
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VDD=30V |
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VIN |
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VDD= --30V |
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10V |
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0V |
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0V |
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VIN |
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ID=4A |
--10V |
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VIN |
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ID= --2.4A |
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RL=7.5W |
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RL=12.5W |
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PW=10ms |
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D |
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VOUT |
PW=10ms |
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D |
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VOUT |
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D.C.≤ 1% |
G |
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FW352 |
D.C.≤ 1% |
G |
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FW352 |
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P.G |
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50W |
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S |
P.G |
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50W |
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S |
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No.7217-2/6
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