Sanyo FW352 Specifications

Ordering number : ENN7217

FW352

N-Channel and P-Channel Silicon MOSFET

FW352

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

Dual chip device with both a p-channel and an n­channel MOSFETs encapsulated in one package for

Package Dimensions

unit : mm

2129

[FW352]

58

high-density mounting.

•

High-density mounting.

•

Excellent ON-resistance characteristic.

14

5.0

Specifications

1.27

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D
T

PW≤10µs, duty cycle≤1% 48 --32 A
Mounted on a ceramic board (1200mm2✕0.8mm)1unit
Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 W

0.595

0.43

4.4

1.8max

1.5

0.1

N-channel P-channel

±20 ±20 V

0.3

6.0

1 : Source1
2 : Gate1
3 : Source2
4 : Gate2

0.2

5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1

SANYO : SOP8

Ratings

60 --60 V

4 --2.4 A

1.7 W

Unit

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

[N-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V , ID=4A 5 7 S

Marking : W352 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72602 TS IM TA-100006

No.7217-1/6

FW352

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 350 pF

Output Capacitance Coss VDS=20V , f=1MHz 110 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 35 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 40 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 12 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 3 nC
Diode Forward Voltage V
[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 440 pF

Output Capacitance Coss VDS=--20V, f=1MHz 110 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 33 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2.4A 14 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2.4A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2.4A 3.7 nC
Diode Forward Voltage V

RDS(on)1 ID=4A, VGS=10V 70 90 mΩ
RDS(on)2 ID=2A, VGS=4V 90 125 mΩ

See specified Test Circuit. 40 ns

r

See specified Test Circuit. 55 ns

f

SD

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=--2.4A, VGS=--10V 165 215 mΩ
RDS(on)2 ID=--1.2A, VGS=--4V 230 320 mΩ

SD

IS=4A, VGS=0 0.81 1.2 V

=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--2.4A 3.2 4.6 S



See specified Test Circuit. 24 ns

r

See specified Test Circuit. 40 ns

f

IS=--2.4A, VGS=0 --0.81 --1.2 V

Ratings

min typ max

Unit

Electrical Connection

8765

1234

1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1

(Top view)

Switching Time Test Circuit

[N-channel] [P-channel]

G

50Ω

VDD=30V

ID=4A
RL=7.5Ω

D

S

FW352

V

OUT

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

V

IN

0V

--10V

PW=10µs
D.C.≤1%

P.G

G

50Ω

VDD= --30V

ID= --2.4A

RL=12.5Ω

D

S

FW352

V

OUT

V

IN

V

IN

No.7217-2/6

I

-- V

D

3.5V

y

fs -- I

0.1

1.0

DS

V

GS

-- V

DS

GS

-- V

GS

D

VDS=10V

°C

75

23 571023 57

1.0

-- A

D

D

VDD=30V
VGS=10V

t

(off)

d

t

f

t

r

td(on)

23 57

-- A

D

8

4.0V

7

6

-- A

5

D

4

3

Drain Current, I

2

1

0

0 0.4 0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

5.0V

6.0V

8.0V

10.0V

Drain-to-Source V oltage, V

200

180

160

140

(on) -- mΩ

120

DS

ID=2A

100

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

02468101214161820

RDS(on) -- V

4A

Gate-to-Source V oltage, V

2

10

7
5

fs -- S

3

y

2

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, 

0.01
23 57

0.001 0.01

3
2

100

7
5

3
2

10

7

Switching Time, SW Time -- ns

5
3

0.1

23 57



Ta= --25°C

25°C

23 57

Drain Current, I

SW Time -- I

Drain Current, I

3.0V

=2.5V

IT04521

Ta=25°C

IT04523

IT04525

IT04527

FW352

10

I

-- V

D

Ta=75°C

GS

VDS=10V

25°C

8

7

6

-- A

5

D

4

3

Drain Current, I

2

1

--25°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Gate-to-Source V oltage, V

180

160

140

120

(on) -- mΩ

DS

100

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

--60 --40 --20 0 20 40 60 80 100 120 140

RDS(on) -- Ta

=4V

GS

=2A, V

I

D

I

=4A, V

D

GS

=10V

GS

-- V

Ambient Temperature, Ta -- °C

I

-- V

F

Ta=75°C

25°C

Ciss

Coss

Crss

SD

--25°C

SD

DS

-- V

DS

-- V

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2

Diode Forward V oltage, V

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0 102030405060

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

No.7217-3/6

[Nch][Nch]

IT04522

[Nch][Nch]

IT04524

[Nch][Nch]

VGS=0

IT04526

[Nch][Nch]

f=1MHz

IT04528

10

VDS=10V

9

ID=4A

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

0123456789101112

VGS -- Qg

Total Gate Charge, Qg -- nC

I

-- V

D

75°C

--0.1

DS

4.0V

--

GS

D

25°C

23 57

-- A

D

DS

GS

V

--1.0

GS

-- V

-- V

--5.0

--4.5

--4.0

--3.5

-- A
D

--3.0

--2.5

--2.0

--1.5

Drain Current, I

--1.0

--0.5
0

--10.0V

0 --0.4 --0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

--5.0V

--6.0V

--8.0V

Drain-to-Source V oltage, V

500

500

450

450

400

400

350

350

(on) -- mΩ

300

300

DS

250

250

ID= --1.2A

200

200

150

150

100

100

Static Drain-to-Source

On-State Resistance, R

50

50

0

0

0 --4 --8 --12 --16 --20--2 --6 --10 --14 --18

RDS(on) -- V

--2.4A

Gate-to-Source V oltage, V

10

VDS= --10V

7
5

3

fs -- S

2

y

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, 

0.01
23 57

--0.001 --0.01

yfs -- I

Ta= --25°C

23 57

Drain Current, I

FW352

[Nch] [Nch]

IT04529

[Pch]

3.5V

--

3.0V

--

= --2.5V

IT04531

[Pch]

Ta=25°C

IT04533

[Pch]

23 57

--10

IT04535

100

7

I

=48A

DP

5
3

2

10

7

I

=4A

D

5

-- A

3

D

2

1.0
7
5

3

Operation in this

2

area is limited by RDS(on).

Drain Current, I

0.1
7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board(1200mm2✕0.8mm) 1unit

0.01
23 571023 57

0.1 1.0

Drain-to-Source V oltage, V

--5.0

--4.5

--4.0

--3.5

-- A
D

--3.0

--2.5

--2.0

--1.5

Drain Current, I

--1.0

--0.5
0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0

Gate-to-Source V oltage, V

400

350

300

(on) -- mΩ

250

DS

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140

Ambient Temperature, Ta -- °C

--10
7
5

3
2

-- A

--1.0

F

7
5

3
2

--0.1
7

Forward Current, I

5
3

2

--0.01

--0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1

Diode Forward V oltage, V

A S O

DC operation

I

-- V

D

GS

5°C

--25°C

Ta=7

25°C

RDS(on) -- Ta

= --4V

GS

= --1.2A, V

I

D

= --2.4A, V

I

D

I

Ta=75°C

F

-- V

25°C

GS

SD

--25°C

100ms

DS

GS

= --10V

SD

≤10µs

10ms

-- V

-- V

-- V

100µs

1ms

23 57

IT04530

[Pch]

VDS= --10V

IT04532

[Pch]

IT04534

[Pch]

VGS=0

IT04536

No.7217-4/6

100

SW Time -- I

t

(off)

d

t

f

t

r

--1.0

Switching Time, SW Time -- ns

100

1.0

3
2

7
5

3
2

10

7
5

3
2

--0.1

23 57

Drain Current, I

--10

VDS= --10V

--9

ID= --2.4A

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1
0

02468101214

VGS -- Qg

Total Gate Charge, Qg -- nC

P

2.5

-- W

2.0

D

1.7

1.5

1.0

0.5

Mounted on a ceramic board(1200mm2✕0.8mm)

D

Total dissipation

1unit

D

td(on)

23 57

-- A

D

-- Ta

VDD= --30V
VGS= --10V

IT04537

IT04539

[Nch, Pch]

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT04541

FW352

[Pch]

--10

[Pch] [Pch]

2

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0 --10 --20 --30 --40 --50 --60

--100
7

I

5
3

2

--10
7
5

-- A

I

3

D

2

--1.0
7
5

3
2

Drain Current, I

--0.1
7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board(1200mm2✕0.8mm) 1unit

--0.01

--0.1 --1.0

2.0

-- W

1.8

1.7

D

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation(FET 1), P

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Allowable Power Dissipation(FET 2), P

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

= --32A

DP

= --2.4A

D

Operation in this
area is limited by RDS(on).

23 57

Drain-to-Source V oltage, V

PD(FET 1) -- PD(FET 2)

Mounted on a ceramic board(1200mm

Ciss

Coss

Crss

A S O

100ms

DC operation

23 57

DS

10ms

--10

DS

-- V

2

✕0.8mm)

D

[Pch]

DS

f=1MHz

-- V

IT04538

≤10µs

100

µ

s

1ms

23 57

IT04540

[Nch, Pch]

IT04542

-- W

--100

No.7217-5/6

FW352

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2002. Specifications and information herein are subject
to change without notice.

No.7217-6/6

PS