Sanyo FW352 Specifications
Ordering number : ENN7217
FW352
N-Channel and P-Channel Silicon MOSFET
FW352
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
Dual chip device with both a p-channel and an nchannel MOSFETs encapsulated in one package for
Package Dimensions
unit : mm
2129
[FW352]
58
high-density mounting.
•
High-density mounting.
•
Excellent ON-resistance characteristic.
14
5.0
Specifications
1.27
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% 48 --32 A
Mounted on a ceramic board (1200mm2✕0.8mm)1unit
Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 W
0.595
0.43
4.4
1.8max
1.5
0.1
N-channel P-channel
±20 ±20 V
0.3
6.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
0.2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Ratings
60 --60 V
4 --2.4 A
1.7 W
Unit
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
[N-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V , ID=4A 5 7 S
Marking : W352 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72602 TS IM TA-100006
No.7217-1/6
FW352
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 350 pF
Output Capacitance Coss VDS=20V , f=1MHz 110 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 35 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 40 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 12 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 3 nC
Diode Forward Voltage V
[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 440 pF
Output Capacitance Coss VDS=--20V, f=1MHz 110 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 33 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2.4A 14 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2.4A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2.4A 3.7 nC
Diode Forward Voltage V
RDS(on)1 ID=4A, VGS=10V 70 90 mΩ
RDS(on)2 ID=2A, VGS=4V 90 125 mΩ
See specified Test Circuit. 40 ns
r
See specified Test Circuit. 55 ns
f
SD
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--2.4A, VGS=--10V 165 215 mΩ
RDS(on)2 ID=--1.2A, VGS=--4V 230 320 mΩ
SD
IS=4A, VGS=0 0.81 1.2 V
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--2.4A 3.2 4.6 S
See specified Test Circuit. 24 ns
r
See specified Test Circuit. 40 ns
f
IS=--2.4A, VGS=0 --0.81 --1.2 V
Ratings
min typ max
Unit
Electrical Connection
8765
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
(Top view)
Switching Time Test Circuit
[N-channel] [P-channel]
G
50Ω
VDD=30V
ID=4A
RL=7.5Ω
D
S
FW352
V
OUT
10V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
0V
--10V
PW=10µs
D.C.≤1%
P.G
G
50Ω
VDD= --30V
ID= --2.4A
RL=12.5Ω
D
S
FW352
V
OUT
V
IN
V
IN
No.7217-2/6
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