Sanyo FW332 Specifications
Ordering number : ENN7134
Preliminary
FW332
N-Channel and P-Channel Silicon MOSFETs
FW332
Motor Driver Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
Composite type with an N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage
Package Dimensions
unit : mm
2129
[FW332]
58
contained in a single package.
•
High-density mounting.
Specifications
14
5.0
1.27
0.595
0.43
4.4
1.8max
1.5
0.1
0.3
6.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
0.2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% 16 --12 A
Mounted on a ceramic board (2000mm2✕0.8mm)1unit
Mounted on a ceramic board (2000mm2✕0.8mm) 1.7 W
Ratings
N-channel P-channel
30 --30 V
±20 ±20 V
4 --3 A
1.4 W
Unit
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
[N-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
Marking : W332 Continued on next page.
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V , ID=4A 3.7 5.3 S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3326
No.7134-1/6
FW332
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 270 pF
Output Capacitance Coss VDS=10V , f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 55 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 7.0 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 1.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.5 nC
Diode Forward Voltage V
[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 370 pF
Output Capacitance Coss VDS=--10V, f=1MHz 100 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 65 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 30 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 8.6 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 1.8 nC
Diode Forward Voltage V
RDS(on)1 ID=4A, VGS=10V 55 70 mΩ
RDS(on)2 ID=2A, VGS=4V 105 145 mΩ
See specified Test Circuit. 80 ns
r
See specified Test Circuit. 17 ns
f
SD
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--3A, VGS=--10V 90 115 mΩ
RDS(on)2 ID=--1.5A, VGS=--4V 160 225 mΩ
SD
IS=4A, VGS=0 0.84 1.2 V
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--3A 2.9 4.2 S
See specified Test Circuit. 45 ns
r
See specified Test Circuit. 31 ns
f
IS=--3A, VGS=0 --0.85 --1.5 V
Ratings
min typ max
Unit
Electrical Connection
D1 D1 D2 D2
(Top view)
S1 G1 S2 G2
Switching Time Test Circuit
[N-channel] [P-channel]
VDD=15V
D
S
ID=4A
RL=3.75Ω
FW332
V
OUT
10V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
G
50Ω
0V
--10V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
G
50Ω
VDD= --15V
ID= --3A
RL=5Ω
D
S
FW332
V
OUT
No.7134-2/6
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