Sanyo FW332 Specifications

Ordering number : ENN7134

FW332

N-Channel and P-Channel Silicon MOSFETs

FW332

Motor Driver Applications

Features

•Low ON-resistance.

•Ultrahigh-speed switching.

•Composite type with an N-channel MOSFET and a P- channel MOSFET driving from a 4V supply voltage contained in a single package.

•High-density mounting.

Specifications

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2129

[FW332]

8

5

4.4

1		4
	5.0	1.8max
		1.5

0.595	1.27	0.43	0.1

0.3
6.0
	1	: Source1
	2	: Gate1
	3	: Source2
0.2	4	: Gate2
	5	: Drain2
	6	: Drain2
	7	: Drain1
	8	: Drain1

SANYO : SOP8

Parameter	Symbol	Conditions					Ratings				Unit
					N-channel				P-channel
Drain-to-Source Voltage	VDSS					30			--30		V
Gate-to-Source Voltage	VGSS					±20			±20		V
Drain Current (DC)	ID					4			--3		A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%				16			--12		A
Allowable Power Dissipation	PD	Mounted on a ceramic board (2000mm2 0.8mm)1unit							1.4		W
Total Dissipation	PT	Mounted on a ceramic board (2000mm2 0.8mm)							1.7		W
Channel Temperature	Tch								150		°C
Storage Temperature	Tstg								--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions					Ratings				Unit
				min			typ			max
[N-channel]
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		30							V
Zero-Gate Voltage Drain Current	IDSS	VDS=30V, VGS=0								1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0								±10	mA
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA		1.0						2.4	V
Forward Transfer Admittance	½yfs½	VDS=10V, ID=4A		3.7			5.3				S
Marking : W332									Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3326 No.7134-1/6

FW332

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=4A, VGS=10V		55	70	mW
	RDS(on)2	ID=2A, VGS=4V		105	145	mW
Input Capacitance	Ciss	VDS=10V, f=1MHz		270		pF
Output Capacitance	Coss	VDS=10V, f=1MHz		90		pF
Reverse Transfer Capacitance	Crss	VDS=10V, f=1MHz		55		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.		9		ns
Rise Time	tr	See specified Test Circuit.		80		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.		25		ns
Fall Time	tf	See specified Test Circuit.		17		ns
Total Gate Charge	Qg	VDS=10V, VGS=10V, ID=4A		7.0		nC
Gate-to-Source Charge	Qgs	VDS=10V, VGS=10V, ID=4A		1.3		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=10V, VGS=10V, ID=4A		1.5		nC
Diode Forward Voltage	VSD	IS=4A, VGS=0		0.84	1.2	V
[P-channel]
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--30			V
Zero-Gate Voltage Drain Current	IDSS	VDS=--30V, VGS=0			--1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0			±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA	--1.0		--2.4	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--3A	2.9	4.2		S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=--3A, VGS=--10V		90	115	mW
	RDS(on)2	ID=--1.5A, VGS=--4V		160	225	mW
Input Capacitance	Ciss	VDS=--10V, f=1MHz		370		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz		100		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz		65		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.		8		ns
Rise Time	tr	See specified Test Circuit.		45		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.		30		ns
Fall Time	tf	See specified Test Circuit.		31		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--3A		8.6		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--3A		1.2		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--3A		1.8		nC
Diode Forward Voltage	VSD	IS=--3A, VGS=0		--0.85	--1.5	V

Electrical Connection
D1	D1	D2	D2
			(Top view)
S1	G1	S2	G2

Switching Time Test Circuit
[N-channel]			[P-channel]
	VDD=15V			VDD= --15V
10V	VIN		0V	VIN
0V		ID=4A	--10V		ID= --3A
	VIN	RL=3.75W		VIN	RL=5W
PW=10ms	D	VOUT	PW=10ms	D	VOUT
D.C.≤ 1%	G		D.C.≤ 1%	G
P.G	50W	FW332	P.G	50W	FW332
		S			S

No.7134-2/6