Sanyo FW332 Specifications

Ordering number : ENN7134

Preliminary

FW332

N-Channel and P-Channel Silicon MOSFETs

FW332

Motor Driver Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

Composite type with an N-channel MOSFET and a P­channel MOSFET driving from a 4V supply voltage

Package Dimensions

unit : mm

2129

[FW332]

58

contained in a single package.

•

High-density mounting.

Specifications

14

5.0

1.27

0.595

0.43

4.4

1.8max

1.5

0.1

0.3

6.0

1 : Source1
2 : Gate1
3 : Source2
4 : Gate2

0.2

5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1

SANYO : SOP8

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D
T

PW≤10µs, duty cycle≤1% 16 --12 A
Mounted on a ceramic board (2000mm2✕0.8mm)1unit
Mounted on a ceramic board (2000mm2✕0.8mm) 1.7 W

Ratings

N-channel P-channel

30 --30 V

±20 ±20 V

4 --3 A

1.4 W

Unit

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

[N-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Marking : W332 Continued on next page.

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V , ID=4A 3.7 5.3 S

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM TA-3326

No.7134-1/6

FW332

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 270 pF

Output Capacitance Coss VDS=10V , f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 55 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 7.0 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 1.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.5 nC
Diode Forward Voltage V
[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 370 pF

Output Capacitance Coss VDS=--10V, f=1MHz 100 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 65 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 30 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 8.6 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 1.8 nC
Diode Forward Voltage V

RDS(on)1 ID=4A, VGS=10V 55 70 mΩ
RDS(on)2 ID=2A, VGS=4V 105 145 mΩ

See specified Test Circuit. 80 ns

r

See specified Test Circuit. 17 ns

f

SD

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=--3A, VGS=--10V 90 115 mΩ
RDS(on)2 ID=--1.5A, VGS=--4V 160 225 mΩ

SD

IS=4A, VGS=0 0.84 1.2 V

=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--3A 2.9 4.2 S



See specified Test Circuit. 45 ns

r

See specified Test Circuit. 31 ns

f

IS=--3A, VGS=0 --0.85 --1.5 V

Ratings

min typ max

Unit

Electrical Connection

D1 D1 D2 D2

(Top view)

S1 G1 S2 G2

Switching Time Test Circuit

[N-channel] [P-channel]

VDD=15V

D

S

ID=4A
RL=3.75Ω

FW332

V

OUT

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

V

IN

G

50Ω

0V

--10V

PW=10µs
D.C.≤1%

P.G

V

IN

V

IN

G

50Ω

VDD= --15V

ID= --3A
RL=5Ω

D

S

FW332

V

OUT

No.7134-2/6

4.0

3.5

6V

3.0

8V

-- A

2.5

D

Drain Current, I

250

200

2.0

1.5

1.0

0.5

0

0 0.2

10V

D

5V

Drain-to-Source V oltage, V

4V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

RDS(on) -- V

DS

DS

GS

=3V

V

GS

-- V

I

-- V

(on) -- mΩ

150

DS

100

50

Static Drain-to-Source

On-State Resistance, R

0

012345678910

Gate-to-Source V oltage, V

10

7
5

fs -- S

y

3

2

1.0

7
5

ID=2A

25°C

4A

yfs -- I

Ta= --25°C

°C

75

-- V

GS

D

Forward Transfer Admittance, 

3

0.1 1.0

2

VDD=15V
VGS=10V

100

7
5

3
2

10

7
5

3

Switching Time, SW Time -- ns

2

23 57 23 5

Drain Current, I

SW Time -- I

t

d

(off)

t

D

f

-- A

D

td(on)

t

r

[Nch]

IT03321

Ta=25°C

IT04018

VDS=10V

IT04020

FW332

I

-- V

D

GS

-- A

3.0

2.5

2.0

VDS=10V

D

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source V oltage, V

160

140

120

(on) -- mΩ

100

DS

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=4V

GS

=2A, V

I

D

=4A, V

I

D

GS

Ta=75°C

GS

=10V

--25°C

25°C

-- V

Ambient Temperature, Ta -- °C

I

-- V

F

Ta=75°C

25°C

Ciss

Coss

Crss

--25°C

SD

SD

-- V

DS

10

7
5

3

-- A

2

F

1.0
7

5

Forward Current, I

3
2

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Diode Forward V oltage, V

Ciss, Coss, Crss -- V

Ciss, Coss, Crss -- pF

1000

7
5

3
2

100

7
5

3
2

[Nch]

IT03322

[Nch][Nch]

IT04019

[Nch][Nch]

VGS=0

IT03326

[Nch][Nch]

f=1MHz

1.0

0.1

23 5757

Drain Current, I

D

1.0

-- A

23 5

IT04021

10

0 5 10 15 20 25 30

Drain-to-Source V oltage, V

DS

-- V

No.7134-3/6

IT03328

10

VDS=10V

VGS -- Qg

ID=4A

8

-- V
GS

6

4

2

Gate-to-Source V oltage, V

0

012345678

Total Gate Charge, Qg -- nC

I

-- V

--3.0

--2.5

--8.0V

6.0V

--

D

--5.0V

-- A

--2.0

D

--1.5

10.0V

--

4.0V

--

DS

V

GS

= --3.0V

FW332

[Nch] [Nch]

IT03329

[Pch]

3

I

=16A

DP

2

10

7

I

=4A

5

D

3
2

-- A
D

1.0
7
5

3
2

Operation in this
area is limited by RDS(on).

0.1

Drain Current, I

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board(2000mm2✕0.8mm) 1unit

0.01

0.1

23 57

Drain-to-Source V oltage, V

--3.0

--2.5

-- A

--2.0

D

--1.5

1.0

I

D

A S O

10ms

100ms

DC operation

23 57

-- V

DS

GS

<10µs

100µs

1ms

23

10

-- V

VDS= --10V

IT04022

[Pch]

5

--1.0

Drain Current, I

--0.5

0

0

--0.2

Drain-to-Source V oltage, V

300

250

200

(on) -- mΩ

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

0 --1 --2 --3 --4 --5 --6

RDS(on) -- V

ID= --1.5A

Gate-to-Source V oltage, V

10

7

5

fs -- S

y

3

2

1.0

7

5

Forward Transfer Admittance, 

3

--0.1

23 57 23 5

Drain Current, I

--0.4 --0.6 --0.8 --1.0

-- V

DS

IT04025

GS

Ta=25°C

--3.0A

--7 --8 --9 --10

-- V

IT04027

VDS= --10V

IT04029 IT04030

yfs -- I

Ta= --25°C

75°C

--1.0

D

GS

D

25°C

-- A

[Pch]

[Pch]

--1.0

Drain Current, I

--0.5

Ta=75°C

25°C

--25°C

0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5

Gate-to-Source V oltage, V

300

250

(on) -- mΩ

200

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

= --1.5A, V

I

D

= --3.0A, V

I

D

GS

GS

GS

= --4V

= --10V

-- V

Ambient Temperature, Ta -- °C

I

-- V

F

Ta=75°C

SD

25°C

--25°C

-- V

SD

--10
7
5

3

-- A

2

F

--1.0
7
5

Forward Current, I

3
2

--0.1

--0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.2--1.1--1.0

Diode Forward V oltage, V

IT04026

[Pch]

IT04028

[Pch]

VGS=0

No.7134-4/6

100

7
5

3
2

10

7
5

3

Switching Time, SW Time -- ns

2

1.0

--0.1

--10

--8

-- V
GS

--6

--4

--2

Gate-to-Source V oltage, V

0

0

2.0

-- W

1.7

D

1.6

1.2

23 57

VDS= --10V
ID= --3A

PD(FET 1) -- PD(FET 2)

Mounted on a ceramic board(2000mm

SW Time -- I

t

(off)

d

t

f

D

r

t

td(on)

Drain Current, I

--1.0

23 57

-- A

D

VGS -- Qg

Total Gate Charge, Qg -- nC

FW332

[Pch]

VDD= --15V
VGS= --10V

IT04031

[Pch] [Pch]

10587136924

IT04033

[Nch, Pch]

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0 --5 --10 --15 --20 --25 --30

3
2

I

DP

--10
7
5

I

D

3
2

-- A
D

--1.0
7
5

3
2

--0.1

Drain Current, I

7
5

Ta=25°C

3
2

Single pulse
Mounted on a ceramic board(2000mm2✕0.8mm) 1unit

--0.01

--0.1

2.0

1.7

-- W

1.6

D

1.4

1.2

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

Drain-to-Source V oltage, V

DS

A S O

= --12A

= --3A

100ms

DC operation

Operation in this
area is limited by RDS(on).

23 5723 57 23 5

--1.0 --10

Drain-to-Source V oltage, V

P

-- Ta

D

Mounted on a ceramic board(2000mm2✕0.8mm)

Total dissipation

10ms

DS

DS

-- V

1ms

-- V

[Pch]

f=1MHz

IT04032

<10µs

100µs

IT04034

[Nch, Pch]

0.8

0.4

Allowable Power Dissipation(FET 1), P

0

0 0.4 0.8 1.2 1.7 2.01.6

Allowable Power Dissipation(FET 2), P

2

✕0.8mm)

-- W

D

IT04023

0.8

0.4

1unit

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT04024

No.7134-5/6

FW332

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.

No.7134-6/6

PS