Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel and P-Channel Silicon MOSFETs
Ultrahigh-Speed Switching Applications
Ordering number:ENN6389
FW313
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage
contained in a single package.
· High-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
SSD
SSG
D
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm2×0.8mm)
T
Package Dimensions
unit:mm
2129
[FW313]
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
WP ≤ elcycytud,sµ01 ≤ %18202–A
0.43
0.1
6.0
1 : Source1
2 : Gate1
0.2
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
sgnitaR
lennahc-Nlennahc-P
0303–V
02±02±V
75–A
7.1W
0.2W
˚C
˚C
tinU
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]lennahc-N[
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SG
SD
SD
SSD)RB(
SSD
SSG
)ffo(VSDI,V01=
1)no(IDV,A7=
2)no(IDV,A4=
I
V,Am1=
D
V
SD
V
SG
0=03V
SG
V,V03=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A7=931S
D
V01=5223mΩ
SG
V4=7305mΩ
SG
30300TS (KOTO) TA-2373 No.6389-1/6
sgnitaR
nimpytxam
Continued on next page.
tinU
FW313
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
]lennahc-P[
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SSD
SSG
SG
R
SD
R
SD
r
f
DS
)no(d
)ffo(d
I
I
SSD)RB(
V
V
)ffo(VSDI,V01–=
1)no(IDV,A5–=
2)no(IDV,A2–=
)no(d
)ffo(d
I
SD
SD
SD
V,A7=
S
D
SD
SG
SD
SD
SD
S
Marking : W313
zHM1=f,V01=007Fp
zHM1=f,V01=083Fp
zHM1=f,V01=081Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS081sn
tiucriCtseTdeificepseeS09sn
tiucriCtseTdeificepseeS08sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
0=58.02.1V
SG
V,Am1–=
V,V03–=
V,V61±=
D
D
SG
SG
V,A5–=
SG
D
0=03–V
SG
0=01–Aµ
SG
0=01±Aµ
SD
Am1–=0.1–5.2–V
A5–=58S
V01–=2435mΩ
V4–=58021mΩ
zHM1=f,V01–=028Fp
zHM1=f,V01–=074Fp
zHM1=f,V01–=032Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS58sn
tiucriCtseTdeificepseeS09sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
sgnitaR
nimpytxam
A7=22Cn
A7=5Cn
A7=6Cn
A5–=52Cn
D
A5–=5Cn
D
A5–=7Cn
D
tinU
Electrical Connection
D1 D1 D2 D2
S1 G1 S2 G2
(Top view)
Switching Time Test Circuit Switching Time Test Circuit
[N-channel] [P-channel]
10V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
G
50Ω
VDD=15V
D
ID=4A
RL=3.75Ω
FW313
V
OUT
0V
--10V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
G
50Ω
S
VDD=--15V
D
ID=--3A
RL=5Ω
S
FW313
V
OUT
No.6389-2/6