SANYO FW313 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel and P-Channel Silicon MOSFETs
Ultrahigh-Speed Switching Applications
Ordering number:ENN6389
FW313
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
58
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Composite type with a N-channel MOSFET and a P­channel MOSFET driving from a 4V supply voltage contained in a single package.
· High-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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)CD(tnerruCniarDI
)eslup(tnerruCniarDI
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noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
SSD SSG
D
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm2×0.8mm)
T
Package Dimensions
unit:mm
2129
[FW313]
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
WP elcycytud,sµ01 %18202–A
0.43
0.1
6.0
1 : Source1 2 : Gate1
0.2
3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8
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lennahc-Nlennahc-P 0303–V 02±02±V 75–A
7.1W
0.2W
˚C ˚C
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Electrical Characteristics at Ta = 25˚C
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R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SG
SD SD
SSD)RB( SSD SSG
)ffo(VSDI,V01=
1)no(IDV,A7=
2)no(IDV,A4=
I
V,Am1=
D
V
SD
V
SG
0=03V
SG
V,V03=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A7=931S
D
V01=5223m
SG
V4=7305m
SG
30300TS (KOTO) TA-2373 No.6389-1/6
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Continued on next page.
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FW313
Continued from preceding page.
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]lennahc-P[
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emiTllaFt
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r
f
DS
SSD SSG
SG
R
SD
R
SD
r
f
DS
)no(d
)ffo(d
I
I
SSD)RB(
V V
)ffo(VSDI,V01–=
1)no(IDV,A5–=
2)no(IDV,A2–=
)no(d
)ffo(d
I
SD SD SD
V,A7=
S
D
SD SG
SD SD SD
S
Marking : W313
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tiucriCtseTdeificepseeS51sn tiucriCtseTdeificepseeS081sn tiucriCtseTdeificepseeS09sn tiucriCtseTdeificepseeS08sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
0=58.02.1V
SG
V,Am1–=
V,V03–=
V,V61±=
D
D SG SG
V,A5–=
SG
D
0=03–V
SG
0=01–Aµ
SG
0=01±Aµ
SD
Am1–=0.1–5.2–V A5–=58S V01–=2435m
V4–=58021m
zHM1=f,V01–=028Fp zHM1=f,V01–=074Fp zHM1=f,V01–=032Fp
tiucriCtseTdeificepseeS51sn tiucriCtseTdeificepseeS051sn tiucriCtseTdeificepseeS58sn tiucriCtseTdeificepseeS09sn I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
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nimpytxam
A7=22Cn A7=5Cn A7=6Cn
A5–=52Cn
D
A5–=5Cn
D
A5–=7Cn
D
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Electrical Connection
D1 D1 D2 D2
S1 G1 S2 G2
(Top view)
Switching Time Test Circuit Switching Time Test Circuit
[N-channel] [P-channel]
10V
0V
PW=10µs D.C.≤1%
P.G
V
IN
V
IN
G
50
VDD=15V
D
ID=4A RL=3.75
FW313
V
OUT
0V
--10V
PW=10µs D.C.≤1%
P.G
V
IN
V
IN
G
50
S
VDD=--15V
D
ID=--3A RL=5
S
FW313
V
OUT
No.6389-2/6
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