SANYO FW307 Datasheet
Ordering number : ENN7274
Preliminary
FW307
N-Channel and P-Channel Silicon MOSFETs
FW307
Ultrahigh-Speed Switching Applications
Features
•
The FW307 incorporates an N-channel MOSFET and a
P-channel MOSFET that feature low ON-resistance and
high-speed switching, thereby enabling high-density
mounting.
•
Excellent ON-resistance characteristic.
Specifications
Package Dimensions
unit : mm
2129
[FW307]
58
4.4
14
5.0
1.8max
1.5
0.595
1.27
0.43
0.1
0.3
6.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
0.2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% 5 --3 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit
Mounted on a ceramic board (900mm2✕0.8mm)
Ratings
N-channel P-channel
250 --250 V
±30 ±30 V
1 --0.7 A
1.7 W
2.0 W
Unit
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
[N-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Gate-to-Source Leakage Current I
(BR)DSSID
DSS
DSS
GSS
GSS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
=1mA, VGS=0 250 V
VDS=250V, VGS=0 100 µA
VDS=15V, VGS=0, Ta=0 to 60°C4µA
VGS=±25V, VDS=0 ±10 µA
VGS=±15V, VDS=0, Ta=0 to 60°C ±1.2 µA
Continued on next page.
83002 TS IM TA-1265
GI IM
Unit
No.7274-1/5
FW307
Continued from preceding page.
Parameter Symbol Conditions
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 1.2 1.6 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 160 pF
Output Capacitance Coss VDS=20V , f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 80 ns
Fall Time t
Diode Forward Voltage V
[P-channel]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.5 --2.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) ID=--0.7A, VGS=--10V 3 4 Ω
Input Capacitance Ciss VDS=--20V, f=1MHz 160 pF
Output Capacitance Coss VDS=--20V, f=1MHz 45 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 90 ns
Fall Time t
Diode Forward Voltage V
yfs
r
f
SD
(BR)DSSID
DSS
DSS
GSS
GSS
yfs
r
f
SD
VDS=10V , ID=1A 1.4 2.1 S
See specified Test Circuit. 15 ns
See specified Test Circuit. 30 ns
IS=1A, VGS=0 1.0 1.2 V
=--1mA, VGS=0 --250 V
VDS=--250V, VGS=0 --100 µA
VDS=15V, VGS=0, Ta=0 to 60°C--4µA
VGS=±25V, VDS=0 ±10 µA
VGS=±15V, VDS=0, Ta=0 to 60°C ±1.2 µA
VDS=--10V, ID=--0.7A 0.7 1.1 S
See specified Test Circuit. 15 ns
See specified Test Circuit. 40 ns
IS=--1A, VGS=0 --1.0 --1.2 V
min typ max
Ratings
Unit
Switching Time Test Circuit
[N-channel] [P-channel]
G
50Ω
VDD=100V
D
S
ID=1A
RL=100Ω
V
FW307
OUT
0V
--10V
PW=10µs
D.C.≤1%
P.G
10V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
Electrical Connection
8 7 6 5
1 2 3 4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
(Top view)
IN
G
50Ω
VDD= --100V
ID= --0.7A
RL=142Ω
D
S
V
OUT
FW307
V
IN
V
No.7274-2/5
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