SANYO FW245 Datasheet
Ordering number : ENN7133
FW245
N-Channel Silicon MOSFET
FW245
DC / DC Converter Applications
Features
•
Low ON-resistance.
•
4V drive.
•
Ultrahigh-speed switching.
Package Dimensions
unit : mm
2129
[FW245]
58
0.3
4.4
6.0
1 : Source1
2 : Gate1
3 : Source2
0.2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Specifications
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 W
30 V
±20 V
7A
1.7 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=7A, VGS=10V 26 34 mΩ
RDS(on)2 ID=4A, VGS=4.5V 39 55 mΩ
=1mA, VGS=0 30 V
VDS=30V, VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=7A 7 10 S
Marking : W245 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-2608
No.7133-1/4
FW245
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=10V , f=1MHz 550 pF
Output Capacitance Coss VDS=10V , f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 90 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 41 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=7A 10 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=7A 1.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=7A 1.0 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 73 ns
r
See specified Test Circuit. 54 ns
f
IS=7A, VGS=0 0.82 1.2 V
Switching Time Test Circuit Electrical Connection
D1 D1 D2 D2
V
IN
10V
0V
PW=10µs
D.C .≤1%
VDD=15V
ID=7A
RL=2.1Ω
V
IN
D
G
V
OUT
Ratings
min typ max
Unit
P.G
10
9
8
8.0V
7
-- A
D
6
5
4
3
Drain Current, I
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
60
55
50
45
40
(on) -- mΩ
DS
35
30
25
20
15
10
Static Drain-to-Source
On-State Resistance, R
5
0
0 2 4 6 8 101214161820
10.0V
50Ω
6.0V
4.5V
I
D
3.5V
S
-- V
3.0V
Drain-to-Source V oltage, V
RDS(on) -- V
ID=7.0A
4.0A
Gate-to-Source V oltage, V
FW245
DS
DS
GS
GS
VGS=2.5V
-- V
-- V
IT00557
Ta=25°C
IT04012
Top view
S1 G1 S2 G2
I
-- V
10
9
8
7
-- A
D
6
5
4
3
Drain Current, I
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0
D
Gate-to-Source V oltage, V
60
50
40
(on) -- mΩ
RDS(on) -- Ta
=4.0A, V
I
D
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--50 --25 0 25 50 75 100 125 150
I
D
GS
=7.0A, V
GS
Ta=75°C
=4.5V
GS
--25°C
25°C
GS
=10.0V
Ambient Temperature, Ta -- °C
-- V
VDS=10V
IT00558
IT04013
No.7133-2/4
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