SANYO FW243 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6364

FW243

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

58

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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)CD(tnerruCniarDI

)eslup(tnerruCniarDI

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noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D
T

Package Dimensions

unit:mm

2129

[FW243]

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)

0.43

0.1

6.0

1 : Source1
2 : Gate1

0.2

3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8

03V
02±V
7A

7.1W

0.2W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

SG

I

SSD)RB(

D

V
V

)ffo(VSDI,V01=

1IDV,A7=

)no(SD

2IDV,A4=

)no(SD

V,Am1=

0=03V

SG

V,V03=

SD
SG

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A7=7.711S

D

V01=1282mΩ

SG

V5.4=9214mΩ

SG

nimpytxam

Marking : FW243 Continued on next page.

30300TS (KOTO) TA-2079 No.6364-1/4

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tinU

FW243

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

V,A7=

S

Switching Time Test Circuit

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

VDD=15V

ID=7A
RL=2.1Ω

D

G

V

OUT

zHM1=f,V01=057Fp
zHM1=f,V01=003Fp
zHM1=f,V01=021Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS741sn
tiucriCtseTdeificepseeS35sn
tiucriCtseTdeificepseeS85sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

0=97.02.1V

SG

D

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nimpytxam

A7=41Cn
A7=5.2Cn
A7=3.1Cn

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DS

S

GS

GS

FW243

–V

P.G

10

9

8.0V

8

7

–A

6

D

Drain Current, I

(on) – mΩ

DS

Static Drain-to-Source

On-State Resistance, R

10.0V

5

4

3

2

1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

60
55

50
45
40
35
30
25
20
15
10

5
0

0 2 4 6 8 101214161820

Drain-to-Source Voltage, VDS–V

ID=4A

Gate-to-Source Voltage, V

50Ω

I

D

4.5V

6.0V

3.5V

RDS(on) -- V

7A

-- V

3.0V

VGS=2.5V

IT00568

Ta=25°C

IT00570

12

10

8

–A

D

6

4

Drain Current, I

2

D

GS

°C

Ta=75

I

-- V

°C

=4A

D

=10.0V, I

--25

D

=7A

0

0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0

60

50

40

(on) – mΩ

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--75 --50 --25 0 25 50 75 100 125 175150

Gate-to-Source Voltage, VGS–V

RDS(on) -- Ta

=4.5V, I

GS

V

GS

V

Ambient Temperature, Ta – ˚C

VDS=10V

25°C

IT00569

IT00571

No.6364-2/4