Sanyo FW241 Specifications

Ordering number : ENN6939

FW241

N-Channel Silicon MOSFET

FW241

Ultrahigh-Speed Swiching Applications

Features

•

This composite device allows high density mounting by
incorporating two MOSFET chips in one package that
feature low on-resistance, ultrahigh switching speed, and
drive voltage of 4.5V.

• The two chips have near characteristics, and especially

suited for HDD.

Package Dimensions

unit : mm

2129

[FW241]

58

14

5.0

1.8max

1.5

0.595

1.27

0.43

0.1

4.4

0.3

6.0

1 : Source1
2 : Gate1
3 : Source2
4 : Gate2

0.2

5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1

SANYO : SOP8

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 ° C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 14 A
Mounted on a ceramic board (2000mm2✕0.8mm)1unit
Tc=25°C 2.0 W

30 V

±20 V

3.5 A

1.4 W

Electrical Characteristics at T a=25 °C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.2 2.5 V
Forward Transfer Admittance

Marking : W241 Continued on next page.

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=3.5A 3.7 5.3 S

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42501 TS IM TA-3130

No.6939-1/4

FW241

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 180 pF

Output Capacitance Coss VDS=10V , f=1MHz 42 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 20 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=3.5A 5.0 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3.5A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3.5A 0.6 nC
Diode Forward Voltage V

RDS(on)1 ID=3.5A, VGS=10V 64 84 mΩ
RDS(on)2 ID=1.8A, VGS=4.5V 105 150 mΩ

See specified Test Circuit 3 ns

r

See specified Test Circuit 6 ns

f

SD

IS=3.5A, VGS=0 0.88 1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit Electrical Connection

G

50Ω

-- V

DS

4V

5V

VDD=15V

ID=1A
RL=15Ω

D

S

=3V

V

GS

GS

FW241

Ta=25°C

V

OUT

IT02676

D1 D1 D2 D2

S1 G1 S2 G2

3.0

2.5

2.0

-- A
D

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0

Gate-to-Source V oltage, VGS -- V

200

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

7

6

5

-- A
D

4

3

2

Drain Current, I

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

10V

8V

6V

V

IN

I

D

Drain-to-Source V oltage, VDS -- V

300

RDS(on) -- V

I

-- V

D

GS

Ta=75°C

--25°C

RDS(on) -- Ta

VDS=10V

25°C

IT02677

250

(on) -- mΩ

200

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

2345678910

1.8A

ID=3.5A

Gate-to-Source V oltage, VGS -- V

IT02678

150

(on) -- mΩ

DS

=1.8A, V

I

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

D

=3.5A, V

I

D

GS

GS

=4V

=10V

Ambient Temperature, Ta -- °C

IT02679

No.6939-2/4