Sanyo FW241 Specifications

Ordering number : ENN6939

FW241

N-Channel Silicon MOSFET

FW241

Ultrahigh-Speed Swiching Applications

Features

Package Dimensions

•	This composite device allows high density mounting by	unit : mm
	incorporating two MOSFET chips in one package that	2129
	feature low on-resistance, ultrahigh switching speed, and			[FW241]
	drive voltage of 4.5V.
•	The two chips have near characteristics, and especially	8		5
	suited for HDD.				0.3
				4.4	6.0	1 : Source1
						2 : Gate1
						3 : Source2
		1		4	0.2	4 : Gate2
						5 : Drain2
			5.0	1.8max
						6 : Drain2
				1.5		7 : Drain1
						8 : Drain1

0.1

SANYO : SOP8

0.595

1.27

0.43

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

30

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

3.5

A

Drain Current (Pulse)

IDP

PW£10ms, duty cycle£1%

14

A

Allowable Power Dissipation

PD

Mounted on a ceramic board (2000mm2 0.8mm)1unit

1.4

W

Tc=25°C

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0

30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0

1

mA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0

±10

mA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250mA

1.2

2.5

V

Forward Transfer Admittance

½yfs½

VDS=10V, ID=3.5A

3.7

5.3

S

Marking : W241

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42501 TS IM TA-3130 No.6939-1/4

FW241

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=3.5A, VGS=10V			64	84	mΩ
	RDS(on)2	ID=1.8A, VGS=4.5V			105	150	mΩ
Input Capacitance	Ciss	VDS=10V, f=1MHz			180		pF
Output Capacitance	Coss	VDS=10V, f=1MHz			42		pF
Reverse Transfer Capacitance	Crss	VDS=10V, f=1MHz			25		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit			7		ns
Rise Time	tr	See specified Test Circuit			3		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit			20		ns
Fall Time	tf	See specified Test Circuit			6		ns
Total Gate Charge	Qg	VDS=10V, VGS=10V, ID=3.5A			5.0		nC
Gate-to-Source Charge	Qgs	VDS=10V, VGS=10V, ID=3.5A			0.9		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=10V, VGS=10V, ID=3.5A			0.6		nC
Diode Forward Voltage	VSD	IS=3.5A, VGS=0			0.88	1.2	V

Switching Time Test Circuit

	VIN	VDD=15V
	10V
	0V		ID=1A
		VIN
			RL=15Ω
	PW=10μs	D	VOUT
	D.C.≤ 1%
		G
	P.G	50Ω	FW241
			S

	7									ID -- VDS
	6
A								6V					4V
	5
--
						8V
D													5V
I	4
Current,				10V											VGS			=3V
	3
Drain	2
	1
	0
	0	0.1		0.2			0.3		0.4			0.5		0.6			0.7		0.8			0.9			1.0
					Drain-to-Source Voltage, VDS														-- V				IT02676
	300							RDS(on) -- VGS
																						Ta=25°C
mΩ	250
--
(on)	200
DS
Source-to-DrainStatic Resistance,State-OnR					ID=3.5A
	150	1.8A
	100
	50
	0
	2	3					4		5			6		7					8			9			10
					Gate-to-Source Voltage, VGS														-- V				IT02678

Electrical Connection

D1 D1 D2 D2

S1 G1 S2 G2

	3.0									ID -- VGS
																								VDS=10V
A	2.5
--	2.0
D
I
Current,	1.5
Drain	1.0																		C
													C				°
												°
																	25
												Ta=75
																	°
	0.5																	C
															--	25
	0
	0		0.5			1.0				1.5		2.0					2.5				3.0					3.5			4.0
							Gate-to-Source Voltage, VGS -- V																				IT02677
	200								RDS(on) -- Ta
mΩ
--	150
(on)
DS													VGS					=4V
Source-to-DrainStatic Resistance,State-OnR											.8A,
										=1
	100								ID									=10V
												.5A,		VGS
									I
										=3
									D
	50
	0
	--60		--40			--20 0				20		40				60 80					100 120					140			160
							Ambient Temperature, Ta -- °C																				IT02679
																								No.6939-2/4