SANYO FW238 Datasheet

Ordering number : ENN6673

FW238

N-Channel Silicon MOSFET

FW238

Load Switching Applications

Features

•

Low ON-resistance.

• 4V drive.

Package Dimensions

unit : mm

2129

[FW238]

58

0.3

4.4

6.0

1 : Source1
2 : Gate1
3 : Source2
4 : Gate2

0.2

5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1

SANYO : SOP8

Specifications

14

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D
T

PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
Mounted on a ceramic board (1500mm2✕0.8mm)

30 V

±20 V

5A

1.7 W

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V

Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=5A, VGS=10V 37 49 mΩ
RDS(on)2 ID=4A, VGS=4V 52 73 mΩ

=1mA, VGS=0 30 V
VDS=30V, VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=5A 4.9 7.0 S



min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1000 TS IM TA-2904

No.6673-1/4

Unit

FW238

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 550 pF
Output Capacitance Coss VDS=10V, f=1MHz 130 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 80 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 55 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 13 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 1.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 2.2 nC
Diode Forward Voltage V

SD

See specified Test Circuit 95 ns

r

See specified Test Circuit 50 ns

f

IS=5A, VGS=0 0.85 1.2 V

min typ max

Marking : W238

Ratings

Unit

Switching Time Test Circuit

V

IN

10V

0V

V

IN

PW=10µs
D.C.≤1%

P.G

9

8

7

6

-- A
D

5

4

3

Drain Current, I

2

1

0

0 0.20.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

10.0V

Drain-to-Source V oltage, VDS -- V

100

G

50Ω

ID -- V

4.0V

3.5V

6.0V

RDS(on) -- V

DS

3.0V

VDD=15V

D

S

GS

ID=5A
RL=3Ω

FW238

V

V

OUT

=2.5V

GS

IT02265

Ta=25°C

10

9

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0

100

ID -- V

GS

Ta=75°C

--25°C

2.5

2.01.0 1.50.5 3.0 3.5

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Ta

VDS=10V

25°C

IT02266

80

5A

ID=4A

(on) -- mΩ

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

2406 2012 14 16 18108

Gate-to-Source V oltage, VGS -- V

IT02267

80

(on) -- mΩ

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--20--60 --40

=4V

GS

=4A, V

I

D

=10V

GS

=5A, V

I

D

0

Ambient Temperature, Ta -- °C

16014012010040 60 8020

IT02268

No.6673-2/4