SANYO FW236 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6268
FW236
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
58
Features
· Low ON resistance.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
T
Package Dimensions
unit:mm
2129
[FW236]
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %125A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
0.43
0.1
6.0
1 : Source1
2 : Gate1
0.2
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
02V
01±V
6A
7.1W
0.2W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)ffo(SG
1IDV,A6=
)no(SD
2IDV,A2=
)no(SD
I
V,Am1=
SSD)RB(
D
V
SD
V
SG
V
SD
0=02V
SG
V,V02=
0=1Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
A6=931S
D
V4=2324mΩ
SG
V5.2=2495mΩ
SG
nimpytxam
Marking : W236 Continued on next page.
21400TS (KOTO) TA-1945 No.6268-1/4
sgnitaR
tinU
FW236
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A6=
S
Switching Time Test Circuit Electrical Connection
VDD=10V
V
IN
4V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=6A
RL=1.67Ω
V
OUT
zHM1=f,V01=007Fp
zHM1=f,V01=002Fp
zHM1=f,V01=051Fp
tiucriCtseTdeificepseeS41sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS57sn
tiucriCtseTdeificepseeS021sn
I,V01=
SG
SG
SG
0=68.02.1V
SG
A6=42Cn
D
I,V01=
A6=5.1Cn
D
I,V01=
A6=2.3Cn
D
D1 D1 D2 D2
sgnitaR
nimpytxam
tinU
P.G
12
4.0V
10
8
–A
D
6
4
2.5V
Drain Current, I
2
0
0
90
80
70
–mΩ
60
DS(on)
50
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
0.5 1.0 1.5
Drain-to-Source Voltage, VDS–V
6A
ID=2A
240612108
Gate-to-Source Voltage, V
50Ω
I
-- V
D
3.5V
3.0V
2.0V
RDS(on) -- V
S
DS
FW236
1.5V
VGS=1.0V
2.0
GS
–V
GS
Ta=25°C
2.5
IT00458
Ta=25°C
IT00460
3.0
S1 G1 S2 G2 (Top view)
I
12
VDS=10V
10
8
–A
D
6
4
D
Drain Current, I
2
0
0.2 0.6 1.61.00.8
0
0.4 1.41.2 1.8 2.0
Gate-to-Source Voltage, VGS–V
60
50
–mΩ
40
DS(on)
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--25--50
RDS(on) -- Ta
=2A, V
I
D
=6A, V
I
D
0
Ambient Temperature, Ta – ˚C
-- V
GS
GS
Ta=75
=2.5V
GS
°C
--25°C
=4.0V
25°C
IT00459
150125100755025
IT00461
No.6268-2/4
Loading...