SANYO FW233 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6391

FW233

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

58

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D
T

Package Dimensions

unit:mm

2129

[FW233]

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)

0.43

0.1

6.0

1 : Source1
2 : Gate1

0.2

3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8

03V
02±V
8A

7.1W

0.2W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(IDV,A8=

2)no(IDV,A4=

I

V,Am1=

D

V

SD

V

SG

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A8=8.941S

D

V01=6112mΩ

SG

V4=4243mΩ

SG

nimpytxam

Marking : W233 Continued on next page.

60100TS (KOTO) TA-2661 No.6391-1/4

sgnitaR

tinU

FW233

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

V,A8=

S

Electrical Connection Switching Time Test Circuit

D1 D1 D2 D2

zHM1=f,V01=0551Fp
zHM1=f,V01=053Fp
zHM1=f,V01=022Fp

tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS011sn
tiucriCtseTdeificepseeS59sn

I,V01=

SG
SG
SG

0=28.02.1V

SG

A8=04Cn

D

I,V01=

A8=5Cn

D

I,V01=

A8=7Cn

D

V

in

10V

0V

V

in

PW=10µs
D.C.≤1%

G

VDD=15V

D

sgnitaR

nimpytxam

ID=8A
RL=1.87W

V

OUT

tinU

S1 G1 S2 G2

15

10.0V

12

I

3.5V

D

3.0V

(Top view)

-- V

DS

6.0V

–A

D

9

6

4.0V

Drain Current, I

3

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

60

50

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

GS

–mΩ

40

(on)

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

8A

ID=4A

240 6 12 14 16 18 20108

Gate-to-Source Voltage, V

GS

2.5V

VGS=2.0V

Ta=25°C

–V

IT00721

IT00723

P.G

16

14

12

–A

10

D

8

6

Drain Current, I

4

2

0

0

40

35

30

–mΩ

25

(on)

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

50W

Gate-to-Source Voltage, VGS–V

--40 --20--60

Ambient Temperature, Ta – ˚C

S

I

-- V

D

1.51.00.5 2.5 3.0

RDS(on) -- Ta

=4A, V

I

D

=8A, V

I

D

0

FW233

GS

=4V

GS

GS

Ta=75°C

2.0

=10V

VDS=10V

25°C

--25°C

IT00722

160120 1401008040 6020

IT00724

No.6391-2/4