SANYO FW232 Datasheet

Ordering number : ENN6618

FW232

N-Channel Silicon MOSFET

FW232

Load Switching Applications

Features

•

Low ON-resistance.

• 2.5V drive.

Package Dimensions

unit : mm

2129

[FW232]

58

4.4

0.3

6.0

1 : Source1
2 : Gate1

14

5.0

1.8max

1.5

3 : Source2

0.2

4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1

Specifications

0.595

1.27

0.43

0.1

8 : Drain1
SANYO : SOP8

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D
T

PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
Mounted on a ceramic board (1000mm2✕0.8mm)

30 V

±10 V

8A

1.7 W

2.0 W

Electrical Characteristics at T a=25 °C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Marking : W232 Continued on next page.

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=8A 16 22 S

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1500 TS IM TA-2986

No.6618-1/4

FW232

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 1550 pF

Output Capacitance Coss VDS=10V , f=1MHz 310 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 190 pF
Turn-ON Delay Time td(on) See specified Test Circuit 22 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 200 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=8A 60 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A 2.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A 10 nC
Diode Forward Voltage V

RDS(on)1 ID=8A, VGS=4V 17 23 mΩ
RDS(on)2 ID=2A, VGS=2.5V 23 32 mΩ

See specified Test Circuit 110 ns

r

See specified Test Circuit 170 ns

f

SD

IS=8A, VGS=0 0.9 1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit Electrical Connection

V

IN
4V
0V

V

IN

PW=10µs
D.C.≤1%

P.G

15

4.0V

12

3.5V

2.0V

G

50Ω

ID -- V

VDD=15V

D

DS

ID=8A
RL=1.875Ω

FW232

S

V

OUT

D1 D1 D2 D2

S1 G1 S2 G2

15

VDS=10V

12

3.0V

-- A
D

9

6

Drain Current, I

3

2.5V

1.5V

-- A
D

9

6

Drain Current, I

3

VGS=1.0V

0

0 0.5 1.0 1.5 2.0 2.5 3.0

35

30

25

(on) -- mΩ

Static Drain-to-Source

On-State Resistance, R

DS

ID=2A

20

15

10

5

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

8A

IT02209

Ta=25°C

0

0

40

35

30

(on) -- mΩ

25

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

Gate-to-Source V oltage, VGS -- V

ID -- V

GS

1.00.6 0.80.40.2 1.4 1.6 1.8

RDS(on) -- Ta

=2.5V

GS

=2A, V

I

D

I

=8A, V

D

GS

(Top view)

25°C

Ta=75°C

--25°C

1.2

IT02210

=4V

0

240612108

Gate-to-Source V oltage, VGS -- V

IT02211

0

--25--50

0

Ambient Temperature, Ta -- °C

150 17512510050 7525

IT02212

No.6618-2/4