SANYO FW231 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6071A
FW231
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
58
Features
· Low ON resistance.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
T
Package Dimensions
unit:mm
2129
[FW231]
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %125A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
0.43
0.1
6.0
1 : Source1
2 : Gate1
0.2
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
02V
01±V
9A
7.1W
0.2W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)ffo(SG
1IDV,A9=
)no(SD
2IDV,A2=
)no(SD
I
V,Am1=
SSD)RB(
D
V
SD
V
SG
V
SD
0=02V
SG
V,V02=
0=1Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
A9=6142S
D
V4=5102mΩ
SG
V5.2=0272mΩ
SG
nimpytxam
Marking : W231 Continued on next page.
52200TS (KOTO) TA-2076 No.6071-1/4
sgnitaR
tinU
FW231
A12026
D1 D1 D2 D2
5678
S1
1234
G1 S2 G2
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A9=
S
Switching Time Test Circuit Electrical Connection
zHM1=f,V01=0591Fp
zHM1=f,V01=055Fp
zHM1=f,V01=073Fp
tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS044sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS003sn
I,V01=
SG
SG
SG
0=28.02.1V
SG
A9=06Cn
D
I,V01=
A9=8.2Cn
D
I,V01=
A9=01Cn
D
sgnitaR
nimpytxam
tinU
|
D
S
V
-
VDD=10V
ID=9A
RL=1.1Ω
V
FW231
DS
I
D
25°C
-
Ta=
OUT
A11946
75°C
1.5V
VGS=1.0V
25°C
ID-
V
18
16
14
–A
12
D
10
8
6
Drain Current, I
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
GS
25
Gate-to-Source Voltage, VGS–V
60
50
–mΩ
40
DS(on)
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
I
=9A
D
I
=2A
D
20 4 6 8 10 12
R
DS(on)
-
V
GS
°C
75°C
Ta=
25°C
-
Ta=25°C
V
IN
4V
0V
PW=10µs
D.C.≤1%
P.G
18
3.5V
16
14
4.0V
–A
12
D
10
8
6
Drain Current, I
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
3.0V
2.5V
2.0V
V
IN
G
50Ω
ID-
Drain-to-Source Voltage, VDS–V
y
|
5
VDS=10V
3
fs|–S
2
y
10
7
5
3
2
fs
Forward Transfer Admittance, |
1.0
23 57 23 2357
0.1 10
1.0
Drain Current, ID– A Gate-to-Source Voltage, VGS–V
No.6071-2/4
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