SANYO FW231 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6071A

FW231

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

58

Features

· Low ON resistance.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D
T

Package Dimensions

unit:mm

2129

[FW231]

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)

0.43

0.1

6.0

1 : Source1
2 : Gate1

0.2

3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8

02V
01±V
9A

7.1W

0.2W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A9=

)no(SD

2IDV,A2=

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A9=6142S

D

V4=5102mΩ

SG

V5.2=0272mΩ

SG

nimpytxam

Marking : W231 Continued on next page.

52200TS (KOTO) TA-2076 No.6071-1/4

sgnitaR

tinU

FW231

A12026

D1 D1 D2 D2

5678

S1

1234

G1 S2 G2

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

V,A9=

S

Switching Time Test Circuit Electrical Connection

zHM1=f,V01=0591Fp
zHM1=f,V01=055Fp
zHM1=f,V01=073Fp

tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS044sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS003sn

I,V01=

SG
SG
SG

0=28.02.1V

SG

A9=06Cn

D

I,V01=

A9=8.2Cn

D

I,V01=

A9=01Cn

D

sgnitaR

nimpytxam

tinU

|

D

S

V

-

VDD=10V

ID=9A

RL=1.1Ω

V

FW231

DS

I

D

25°C

-

Ta=

OUT

A11946

75°C

1.5V

VGS=1.0V

25°C

ID-

V

18

16

14

–A

12

D

10

8

6

Drain Current, I

4

2

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

GS

25

Gate-to-Source Voltage, VGS–V

60

50

–mΩ

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

I

=9A

D

I

=2A

D

20 4 6 8 10 12

R

DS(on)

-

V

GS

°C

75°C

Ta=

25°C

-

Ta=25°C

V

IN

4V
0V

PW=10µs
D.C.≤1%

P.G

18

3.5V

16

14

4.0V

–A

12

D

10

8

6

Drain Current, I

4

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

3.0V

2.5V

2.0V

V

IN

G

50Ω

ID-

Drain-to-Source Voltage, VDS–V

y

|

5

VDS=10V

3

fs|–S

2

y

10

7
5

3

2

fs

Forward Transfer Admittance, |

1.0
23 57 23 2357

0.1 10

1.0

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

No.6071-2/4