SANYO FW214 Datasheet
FW214
Ordering number :EN5850
Ultrahigh-Speed Switching Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOS FET
Features
· Low ON resistance.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
T
Package Dimensions
unit:mm
2129
[FW214]
58
0.3
4.4
14
5.0
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %184A
PD
Mounted on ceramic board (1200mm2×0.8mm) 1unit
Mounted on ceramic board (1200mm
0.43
2
×0.8mm)
1.8max
1.5
0.1
6.0
0.2
1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
02V
01±V
5A
7.1W
0.2W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaGoreZI
tnerruCkaeLecruoS-ot-etaG
tnerruCffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiC
ecnaticapaCtuptuO
ecnaticapaCrefsnarTesreveR
emiTyaleDNO-nruT
emiTesiR
emiTyaleDFFO-nruT
emiTllaF
egrahCetaGlatoT
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egrahC)"relliM"(niarD-ot-etaG
egatloVdrawroFedoiD
I
R
R
t
t
V
I
SSD)RB(
D
V
SSD
SSG
ssrCV
t
r
t
f
gQVSDV,V01=
sgQVSDV,V01=
dgQVSDV,V01=
DS
SD
V
SG
V
)ffo(SG
SD
1IDV,A5=
)no(SD
2IDV,A2=
)no(SD
V
SD
ssoCV
SD
SD
)no(d
)ffo(d
I
S
V,Am1=
0=02V
SG
V,V02=
0=001Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
A5=831S
D
V4=8305mΩ
SG
V5.2=0507mΩ
SG
zHM1=f,V01=005
zHM1=f,V01=082Fp
zHM1=f,V01=051Fp
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS052sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS031sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,A5=
0=0.12.1V
SG
D
A5=22Cn
A5=3Cn
A5=3Cn
52698TS (KOTO) TA-0974 No.5850-1/3
nimpytxam
sgnitaR
tinU
Fp
Switching Time Test Circuit
V
4V
0V
PW=10µs
D.C.≤1%
IN
V
VDD=10V
ID=5A
IN
G
RL=2Ω
D
V
FW214
OUT
P.G
50Ω
6
6.0V
5.0V
5
A
4
-
D
3
2
4.0V
8.0V
Drain Current, I
1
0
00.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5
Drain-to-Source Voltage, V
100
VDS=10V
7
5
|-S
3
fs
y
2
10
7
5
3
2
1.0
7
2
Forwaard Transfer Addmittance,|
0.1
100
–mΩ
)
on
DS (
Static Drain-to-Source
ON-State Resistance, R
22
335577
0.01
90
80
70
60
50
40
30
20
10
0
-60 -40
-20 0 20 40 60 80 100 120 140
FW214
S
ID-
V
DS
3.0V
3.5V
2.5V
2.0V
DS
y
fs |
–
-
25˚C
75˚C
I
D
1.0
23 57
|
0.1
Ta=
2357
Drain Current, ID-A
(on)
R
DS
I
D
-
=2A,V
I
D
Tc
=2.5V
GS
=5A,V
Case Temperature, Tc - ˚C
ID-
V
GS
25˚C
75˚C
–
Ta=
25˚C
VGS=1.5V
A
-
D
Drain Current, I
10
9
8
7
6
5
4
3
2
1
0
VDS=10V
1.0 1.5 2.0 2.5
- V Gate-to-Source Voltage, VDS-V
(on)
-
V
–25˚C
SD
V
25˚C
–
GS
GS
- V
R
DS
=5A
D
I
2345 678910
25˚C
100
90
80
–mΩ
)
70
on
DS (
60
50
40
30
20
10
Static Drain-to-Source
ON-State Resistance, R
0
10
01
=2A
D
I
Gate-to-Source Voltage,V
10
VGS=0
7
5
3
2
–A
1.0
F
7
5
=4V
GS
3
2
0.1
7
Forward Current, I
5
3
2
0.01
0 0.2 0.4 0.6 0.8 1.21.0
IF-
Ta=75˚C
Diode Forward Voltage, VSD–V
Tc=25˚C
No.5850-2/3
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