SANYO FW213 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

DC-DC Converter Applications

Ordering number:EN5908

FW213

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

D

R
R

Package Dimensions

unit:mm

2129

[FW213]

58

0.3

4.4

14

5.0

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

V,Am1=

0=03V

SG

V,V03=

0=001Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A5=701S

D

V01=5223mΩ

SG

V4=7305mΩ

SG

zHM1=f,V01=007Fp
zHM1=f,V01=083Fp
zHM1=f,V01=081Fp

SSD
SSG

)ffo(SG

1IDV,A5=

)no(SD

2IDV,A5=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

2

×0.8mm)

1.8max

1.5

0.1

nimpytxam

6.0

0.2

sgnitaR

Continued on next page.

1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1

SANYO:SOP8

03V
02±V
7A

7.1W

0.2W

˚C
˚C

tinU

D1498TS (KOTO) TA-1283 No.5908-1/4

FW213

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5Cn

egrahC"relliM"niarD-ot-etaGdgQ 6Cn

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

V

I

DS

S

V,V01=

SD

SG

V,A5=

0=0.12.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepSeeS51sn
tiucriCtseTdeificepSeeS081sn
tiucriCtseTdeificepSeeS09sn
tiucriCtseTdeificepSeeS08sn

I,V01=

D

sgnitaR

nimpytxam

22Cn

A5=

tinU

V

IN

10V

0V

PW=10µs

≤

D.C.

P.G

8

6V

8V

10V

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

–A

D

Drain Current, I

7

6

5

4

3

2

1

0

1%

4V

3.5V

V

IN

ID-

3V

G

50

VDD=10V

ID=5A
RL=2

D

Ω

V

S

DS

Drain-to-Source Voltage,VDS–V

y

|

fs

|-I

Ta=

-

D

25˚C

1.0

D

75˚C

23 2357

–A

100

7
5

–S

|

3

fs

y

2

|

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance,

0.1

0.01

23 57

0.1

23 57

Drain Current, I

Ω

V

OUT

FW213

2.5V

VGS=2V

VDS=10V

25˚C

10

10

VDS=10V

9
8

7

–A

D

6
5
4
3

Drain Current, I

2
1
0

0 0.5 1.0 1.5 2.0 2.5 3.0

ID-

V

GS

Gate-to-Source Voltage, V

60

50

–mΩ

)

on

40

DS (

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

Gate-to-Source Voltage, V

R

DS

(on)

-

V

GS

GS

GS

I

D

–V

=5A

–V

25˚C

75˚C

Ta=

Tc=25˚C

25˚C

-

No.5908-2/4