Sanyo FW138 Specifications

FW138
P-Channel Silicon MOSFET
FW138
Load Switching Applications
Features
4V drive.
Low ON-resistance.
Package Dimensions
unit : mm
2129
[FW138]
58
0.3
4.4
6.0
1 : Source1 2 : Gate1 3 : Source2
Specifications
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
4 : Gate2
0.2
5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
SANYO : SOP8
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Total Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D T
PW10µs, duty cycle1% --32 A Mounted on a ceramic board (1500mm2✕0.8mm) 1unit Mounted on a ceramic board (1500mm2✕0.8mm)
--30 V
±20 V
--4 A
1.7 W
2.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance
(BR)DSSID
DSS GSS
yfs
=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --1 µA VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--4A 4 5.8 S
Marking : W138 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2941
No.7006-1/4
FW138
D1 D1 D2 D2
S1 G1 S2 G2
Continued from preceding page.
Parameter Symbol Conditions
RDS(on) 1 ID=--4A, VGS=--10V 64 84 m
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 560 pF Output Capacitance Coss VDS=--10V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 95 pF Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 55 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 12 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 2 nC Diode Forward Voltage V
RDS(on) 2 ID=--2A, VGS=--4.5V 94 132 m RDS(on) 3 ID=--2A, VGS=--4V 104 146 m
See specified Test Circuit 18 ns
r
See specified Test Circuit 60 ns
f
SD
IS=--4A, VGS=0 --0.85 --1.5 V
Ratings
min typ max
Unit
DS
--4.0V
VDD= --15V
D
--3.5V
GS
ID= --4A RL=3.75
FW138
S
--3.0V
--2.5V
VGS= --2.0V
IT02844
Ta=25°C
V
OUT
I
-- V
--9
--8
--7
--6
-- A D
--5
--4
--3
Drain Current, I
--2
--1 0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
D
25°C
Gate-to-Source V oltage, VGS -- V
200
RDS(on) -- Ta
Switching Time Test Circuit Electrical Connection (Top view)
V
IN
0V
--10V V
IN
PW=10µs
--6
--5
--4
-- A D
--3
--2
Drain Current, I
--1
0
0 --0.2
200
D.C.1%
P.G
--6.0V
--10.0V
Drain-to-Source V oltage, VDS -- V
RDS(on) -- V
G
50
I
-- V
D
--4.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
GS
Ta=75°C
--25
°C
VDS= --10V
Ta= --25°C
75°C
25°C
IT02845
150
(on) -- m
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
ID= --2.0A
150
--4.0A
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
IT02846
(on) -- m
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60
--40 --20 0 20 40 60 80 100 120 160140
I
= --4.0A, V
I
D
= --2.0A, V
D
I
= --10.0V
GS
= --4.0V
GS
= --2.0A, V
D
= --4.5V
GS
No.7006-2/4
IT02847
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