Sanyo FW138 Specifications

Ordering number : ENN7006

FW138

P-Channel Silicon MOSFET

FW138

Load Switching Applications

Features

•4V drive.

•Low ON-resistance.

Specifications

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2129

[FW138]

8

5

4.4

1		4
	5.0	1.8max
		1.5

0.595	1.27	0.43	0.1

	0.3
	6.0	1	: Source1
		2	: Gate1
		3	: Source2
	0.2	4	: Gate2
		5	: Drain2
		6	: Drain2
		7	: Drain1
		8	: Drain1

SANYO : SOP8

Parameter	Symbol	Conditions			Ratings			Unit
Drain-to-Source Voltage	VDSS						--30	V
Gate-to-Source Voltage	VGSS						±20	V
Drain Current (DC)	ID						--4	A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					--32	A
Allowable Power Dissipation	PD	Mounted on a ceramic board (1500mm2 0.8mm) 1unit					1.7	W
Total Dissipation	PT	Mounted on a ceramic board (1500mm2 0.8mm)					2.0	W
Channel Temperature	Tch						150	°C
Storage Temperature	Tstg				--55 to +150			°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions			Ratings			Unit
			min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--30					V
Zero-Gate Voltage Drain Current	IDSS	VDS=--30V, VGS=0					--1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0					±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA	--1.0				--2.4	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--4A	4		5.8			S
Marking : W138					Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71001 TS IM TA-2941 No.7006-1/4

FW138

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
	RDS(on) 1	ID=--4A, VGS=--10V			64	84	mW
Static Drain-to-Source On-State Resistance	RDS(on) 2	ID=--2A, VGS=--4.5V			94	132	mW
	RDS(on) 3	ID=--2A, VGS=--4V			104	146	mW
Input Capacitance	Ciss	VDS=--10V, f=1MHz			560		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz			150		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz			95		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit			9		ns
Rise Time	tr	See specified Test Circuit			18		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit			55		ns
Fall Time	tf	See specified Test Circuit			60		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--4A			12		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--4A			2		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--4A			2		nC
Diode Forward Voltage	VSD	IS=--4A, VGS=0			--0.85	--1.5	V

Switching Time Test Circuit																									VDD= --15V
							0V				VIN
																															ID= --4A
					--10V													VIN													RL=3.75Ω
																										D									VOUT
						PW=10µs
						D.C.≤ 1%																G
																																			FW138
							P.G														50Ω									S
	--6															ID -- VDS
															. 0V						4	.5V	.	0V	3
																							4
								. 0V						6				--					--		.5V
																									--
	--5						--	10					--
																																	.0V
																																3
A																															--
--	--4
D
I
Current,	--3
Drain	--2																																	--2.5V
	--1
																													VGS= --2.0V
	0
		0	--0.1		--0.2			--0.3								--0.4		--0.5					--0.6 --0.7 --0.8 --0.9 --1.0
						Drain-to-Source Voltage, VDS																						-- V						IT02844
	200										RDS(on) -- VGS
																															Ta=25°C
mΩ
--	150
(on)
						--4.0A
DS
Source-to-DrainStatic Resistance,State-OnR	100		ID= --2.0A
	50
	0
		0	--2		--4			--6								--8		--10					--12 --14 --16										--18 --20
						Gate-to-Source Voltage, VGS																						-- V						IT02846

Electrical Connection (Top view)

D1

D1

D2

D2

S1 G1 S2 G2

	--9										ID -- VGS
																												VDS= --10V
	--8
																												C						C
																											°					°
	--7																									--	25
A																									Ta=					C		25
--	--6																												75
D																													°
I	--5
Current,
	--4
Drain
	--3
																	°	C
	--2
												25				Ta=75				°	C
	--1
													°C
	0																	--	25
	0		--0.5			--1.0				--1.5					--2.0					--2.5				--3.0							--3.5				--4.0
							Gate-to-Source Voltage, VGS																		-- V							IT02845
	200									RDS(on) -- Ta
mΩ
--	150
(on)
																							.
																							0V
																					4
DS																				--											.5V
															VGS												=			4
																		=
Source-to-DrainStatic Resistance,State-OnR																													--
													.0A,										V		GS
											2
										=	--										.0A,
	100									ID										2
																		--
															=
															ID				.0V
															10
															=--
										4.0A,			VGS
							I	=		--
	50						D
	0
	--60		--40			--20		0		20				40 60							80 100								120		140				160
								Ambient Temperature, Ta -- °C																								IT02847
																													No.7006-2/4