FW115
Ordering number :EN5849
S/W Load Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOS FET
Features
· 4V drive.
· Low ON resistance.
Package Dimensions
unit:mm
2129
[FW115]
58
0.3
4.4
14
5.0
1.8max
1.5
0.2
1:Source1
6.0
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaG
tnerruCffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiC
ecnaticapaCtuptuO
ecnaticapaCrefsnarTesreveR
emiTyaleDNO-nruT
emiTesiR
emiTyaleDFFO-nruT
emiTllaF
egrahCetaGlatoT
egrahCecruoS-ot-etaG
egrahC)"relliM"(niarD-ot-etaG
egatloVdrawroFedoiD
D
D
T
I
R
R
t
t
r
t
t
f
V
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %123–A
PD
Mounted on ceramic board (1200mm2×0.8mm) 1unit
Mounted on ceramic board (1200mm
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
1IDV,A3–=
)no(SD
2IDV,A1–=
)no(SD
V
ssoCV
ssrCV
)no(d
)ffo(d
gQVSDV,V01–=
sgQVSDV,V01–=
dgQVSDV,V01–=
I
DS
S
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
SD
SD
SD
SD
V,A3–=
0=001–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–5.2–V
D
A3–=35S
D
V01–=5658mΩ
SG
V4–=531091mΩ
SG
zHM1=f,V01–=074
zHM1=f,V01–=082Fp
zHM1=f,V01–=041Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS54sn
I,V01–=
SG
SG
SG
0=0.1–5.1–V
SG
D
I,V01–=
D
I,V01–=
D
0.43
2
×0.8mm)
A3–=51Cn
A3–=3Cn
A3–=4Cn
0.1
SANYO:SOP8
sgnitaR
nimpytxam
03–V
02±V
3–A
7.1W
0.2W
˚C
˚C
tinU
Fp
52698TS (KOTO) TA-1218 No.5849-1/3
Switching Time Test Circuit
VDD=–15V
ID=–3A
IN
G
RL=5Ω
D
–10V
0V
V
IN
PW=10µs
D.C.≤1%
V
V
FW115
OUT
P.G
A
-3.5
-3.0
-2.5
50Ω
–8.0V
–10.0V
–6.0V
-
D
-2.0
-1.5
-1.0
Drain Current, I
-0.5
0
0 -0.1
-0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5
Drain-to-Source Voltage, V
10
VDS=–10V
7
5
|-S
fs
3
y
2
1.0
7
5
3
2
0.1
7
Forwaard Transfer Addmittance,|
0.01
2233557
-0.01
200
180
160
–mΩ
)
140
on
DS (
120
100
80
60
40
Static Drain-to-Source
ON-State Resistance, R
20
0
-60 -40
-20 0 20 40 60 80 100 120 140
Case Temperature, Tc - ˚C
S
ID-
V
DS
–4.0V
–4.5V
–5.0V
|
-0.1
y
fs |
25˚C
-
Ta=
23 57
–3.5V
DS
-
I
D
75˚C
-1.0
Drain Current, ID-A
(on)
R
DS
-
Tc
=–1A,V
D
I
=-3A,V
I
D
VGS=–3.0V
-6
-5
A
-4
-
D
-3
-2
Drain Current, I
-1
VDS=-10V
0
ID-
-1.0 -1.5 -2.0 -2.5 -3.0 -4.0-3.5
V
GS
75˚C
25˚C
Ta=–25˚C
- V Gate-to-Source Voltage, VDS-V
R
(on)
-
200
DS
V
GS
25˚C
160
–mΩ
)
on
DS (
120
23 57
=–4V
GS
=-10V
GS
-10
80
40
Static Drain-to-Source
ON-State Resistance, R
0
0-2
-4 -6 -8 -10 -12 -14 -16 -18 -20
Gate-to-Source Voltage,V
-10
VGS=0
7
5
3
2
-A
-1.0
F
7
5
3
2
-0.1
7
Forward Current, I
5
3
2
-0.01
0 -0.2 -0.4 -0.6 -0.8 -1.4-1.2-1.0
IF-
Ta=75˚C
25˚C
I
V
25˚C
–
I
D
=–1A
D
SD
=–3A
GS
- V
Diode Forward Voltage, VSD–V
Tc=25˚C
No.5849-2/3