SANYO FW115 Datasheet

FW115

Ordering number :EN5849

S/W Load Applications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

P-Channel Silicon MOS FET

Features

· 4V drive.

· Low ON resistance.

Package Dimensions

unit:mm

2129

[FW115]

58

0.3

4.4

14

5.0

1.8max

1.5

0.2

1:Source1

6.0

2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBS-DV

tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaG

tnerruCffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiC

ecnaticapaCtuptuO

ecnaticapaCrefsnarTesreveR

emiTyaleDNO-nruT

emiTesiR

emiTyaleDFFO-nruT

emiTllaF

egrahCetaGlatoT

egrahCecruoS-ot-etaG

egrahC)"relliM"(niarD-ot-etaG

egatloVdrawroFedoiD

D

D
T

I

R
R

t

t

r

t

t

f

V

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %123–A

PD

Mounted on ceramic board (1200mm2×0.8mm) 1unit
Mounted on ceramic board (1200mm

I

SSD)RB(

D

V

SSD

V

SSG

V

)ffo(SG

1IDV,A3–=

)no(SD

2IDV,A1–=

)no(SD

V

ssoCV

ssrCV

)no(d

)ffo(d

gQVSDV,V01–=

sgQVSDV,V01–=

dgQVSDV,V01–=

I

DS

S

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG
SD

SD
SD
SD

V,A3–=

0=001–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

Am1–=0.1–5.2–V

D

A3–=35S

D

V01–=5658mΩ

SG

V4–=531091mΩ

SG

zHM1=f,V01–=074
zHM1=f,V01–=082Fp
zHM1=f,V01–=041Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS54sn
I,V01–=

SG
SG
SG

0=0.1–5.1–V

SG

D

I,V01–=

D

I,V01–=

D

0.43

2

×0.8mm)

A3–=51Cn
A3–=3Cn
A3–=4Cn

0.1

SANYO:SOP8

sgnitaR

nimpytxam

03–V
02±V
3–A

7.1W

0.2W

˚C
˚C

tinU

Fp

52698TS (KOTO) TA-1218 No.5849-1/3

Switching Time Test Circuit

VDD=–15V

ID=–3A

IN

G

RL=5Ω

D

–10V

0V

V

IN

PW=10µs
D.C.≤1%

V

V

FW115

OUT

P.G

A

-3.5

-3.0

-2.5

50Ω

–8.0V

–10.0V

–6.0V

-

D

-2.0

-1.5

-1.0

Drain Current, I

-0.5

0

0 -0.1

-0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5

Drain-to-Source Voltage, V

10

VDS=–10V

7
5

|-S

fs

3

y

2

1.0
7
5

3
2

0.1
7

Forwaard Transfer Addmittance,|

0.01
2233557

-0.01

200
180
160

–mΩ

)

140

on

DS (

120
100

80
60
40

Static Drain-to-Source

ON-State Resistance, R

20

0

-60 -40

-20 0 20 40 60 80 100 120 140

Case Temperature, Tc - ˚C

S

ID-

V

DS

–4.0V

–4.5V

–5.0V

|

-0.1

y

fs |

25˚C

-

Ta=

23 57

–3.5V

DS

-

I

D

75˚C

-1.0

Drain Current, ID-A

(on)

R

DS

-

Tc

=–1A,V

D

I

=-3A,V

I

D

VGS=–3.0V

-6

-5

A

-4

-

D

-3

-2

Drain Current, I

-1

VDS=-10V

0

ID-

-1.0 -1.5 -2.0 -2.5 -3.0 -4.0-3.5

V

GS

75˚C

25˚C

Ta=–25˚C

- V Gate-to-Source Voltage, VDS-V

R

(on)

-

200

DS

V

GS

25˚C

160

–mΩ

)

on

DS (

120

23 57

=–4V

GS

=-10V

GS

-10

80

40

Static Drain-to-Source

ON-State Resistance, R

0

0-2

-4 -6 -8 -10 -12 -14 -16 -18 -20

Gate-to-Source Voltage,V

-10

VGS=0

7
5

3
2

-A

-1.0

F

7
5

3
2

-0.1
7

Forward Current, I

5
3

2

-0.01
0 -0.2 -0.4 -0.6 -0.8 -1.4-1.2-1.0

IF-

Ta=75˚C

25˚C

I

V

25˚C

–

I

D

=–1A

D

SD

=–3A

GS

- V

Diode Forward Voltage, VSD–V

Tc=25˚C

No.5849-2/3