SANYO FW114 Datasheet

FW114

Ordering number :EN5848

S/W Load Applications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

P-Channel Silicon MOS FET

Features

· Low ON resistance.

· 2.5V drive.

Package Dimensions

unit:mm

2129

[FW114]

58

0.3

0.595

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBS-DV

tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI

tnerruCffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoT

egrahCecruoS-ot-etaG

egrahC)"relliM"(niarD-ot-etaG

egatloVdrawroFedoiDV

D

PD
D
T

R
R

r

f

gQVSDV,V01–=

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %123–A

Mounted on ceramic board (1000mm2×0.8mm) 1unit
Mounted on ceramic board (1000mm

I

SSD)RB(

D

V

SSD

V

SSG

V

)ffo(SG

1IDV,A3–=

)no(SD

2IDV,A1–=

)no(SD

)no(d

)ffo(d

sgQVSDV,V01–=

dgQVSDV,V01–=

I

DS

S

V,Am1–=

0=02–V

SG

V,V02–=

SD
SG
SD

SD
SD
SD

V,A3–=

0=001–Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01–=

Am1–=4.0–4.1–V

D

A3–=58S

D

V4–=0709mΩ

SG

V5.2–=29031mΩ

SG

zHM1=f,V01–=006Fp
zHM1=f,V01–=003Fp
zHM1=f,V01–=051Fp

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tiucriCtseTdeificepseeS041sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS58sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

0=0.1–5.1–V

SG

4.4

14

5.0

1.27

0.43

2

×0.8mm)

A3–=42Cn

D

A3–=3Cn

D

A3–=6Cn

D

1.8max

1.5

0.1

nimpytxam

6.0

0.2

sgnitaR

1:Source1
2:Gate1
3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1

SANYO:SOP8

02–V
01±V
3–A

7.1W

0.2W

˚C
˚C

tinU

52698TS (KOTO) TA-1217 No.5848-1/3

Switching Time Test Circuit

VDD=–10V

ID=–3A

IN

G

RL=3.33Ω

D

0V

–4V

PW=10µs
D.C.≤1%

V

IN

V

V

FW114

OUT

P.G

A

-

Drain Current, I

D

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0

0 -0.1

50Ω

–5.0V

–4.0V

–6.0V

–8.0V

-0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5

Drain-to-Source Voltage, VDS-V

100

VDS=–10V

7
5

|-S

3

fs

y

2

10

7
5

3
2

1.0
7

Forwaard Transfer Addmittance,|

0.1

200
180
160

–mΩ

)

140

on

DS (

120
100

80
60
40

Static Drain-to-Source

ON-State Resistance, R

20

-0.01

0

-60 -40

22335577

-20 0 20 40 60 80 100 120 140

Case Temperature, Tc - ˚C

FW114

S

ID-

V

DS

–2.5V

–3.5V

–3.0V

–2.0V

y

|

fs

|

-

I

D

Ta=–25˚C

75˚C

-0.1

2357

-1.0

Drain Current, ID-A

(on)

R

DS

-

=–1A,V

D

I

=–3A,V

I

D

Tc

VGS=–1.5V

2357

=–2.5V

S

G

=–4V

GS

25˚C

-10

ID-

-6

V

10V

=–

DS

-5

A

-4

-

D

-3

-2

V

Drain Current, I

-1

0

25˚C

-1.0 -1.5 -2.0 -2.5

Gate-to-Source Voltage, V

(on)

200
180
160

–mΩ

)

140

on

DS (

120
100

80
60

40
20

Static Drain-to-Source

ON-State Resistance, R

0

0-1

=–1A

D

I

-2 -3 -4 -5 -6 -7 -8 -9 -10

=–3A

D

I

R

DS

-

Gate-to-Source Voltage,V

IF-

-10

VGS=0

7
5

3
2

-A

-1.0

F

7
5

3
2

-0.1

7

Forward Current, I

5
3

2

-0.01
0 -0.2 -0.4 -0.6 -0.8 -1.2-1.0

V

25˚C

Ta=75˚C

Diode Forward Voltage, VSD–V

GS

75˚C

V

SD

–25˚C

Ta=–25˚C

DS

GS

- V

GS

-V

Tc=25˚C

No.5848-2/3