SANYO FW113 Datasheet

FW113

Ordering number :EN5847

S/W Load Applications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

P-Channel Silicon MOS FET

Features

· 4V drive.

· Low ON resistance.

Package Dimensions

unit:mm

2129

[FW113]

58

0.3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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)CD(tnerruCniarDI

)eslup(tnerruCniarDI

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noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBS-DV

tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaG

tnerruCffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiC

ecnaticapaCtuptuO

ecnaticapaCrefsnarTesreveR

emiTyaleDNO-nruT

emiTesiR

emiTyaleDFFO-nruT

emiTllaF

egrahCetaGlatoT

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egrahC)"relliM"(niarD-ot-etaG

egatloVdrawroFedoiD

D

D
T

I

R
R

t

t

r

t

t

f

V

4.4

1:Source1

6.0

2:Gate1
3:Source2

14

5.0

1.8max

1.5

0.2

4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %123–A

PD

Mounted on ceramic board (1000mm2×0.8mm) 1unit
Mounted on ceramic board (1000mm

I

SSD)RB(

D

V

SSD

V

SSG

V

)ffo(SG

1IDV,A5–=

)no(SD

2IDV,A2–=

)no(SD

V

ssoCV

ssrCV

)no(d

)ffo(d

gQVSDV,V01–=

sgQVSDV,V01–=

dgQVSDV,V01–=

I

DS

S

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG
SD

SD
SD
SD

V,A5–=

0=001–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

Am1–=0.1–5.2–V

D

A5–=58S

D

V01–=2435mΩ

SG

V4–=58021mΩ

SG

zHM1=f,V01–=028
zHM1=f,V01–=074Fp
zHM1=f,V01–=032Fp

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tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS58sn
tiucriCtseTdeificepseeS09sn
I,V01–=

SG
SG
SG

0=0.1–5.1–V

SG

D

I,V01–=

D

I,V01–=

D

0.43

2

×0.8mm)

A5–=52Cn
A5–=5Cn
A5–=7Cn

0.1

SANYO:SOP8

sgnitaR

nimpytxam

03–V
02±V
5–A

7.1W

0.2W

˚C
˚C

tinU

Fp

52698TS (KOTO) TA-1215 No.5847-1/3

Switching Time Test Circuit

=

V

–15V

DD

=

I

–5A

D

=

R

3Ω

L

D

–10V

V

0V

PW=10µs

D.C.≤1%

IN

V

IN

FW113

V

OUT

P.G

A

-

D

Drain Current, I

|-S

fs

y

10

1.0

-6

-5

-4

-3

-2

-1

0

0-0.1

5

VDS=–10V

3
2

7
5

3
2

7

G

50Ω

–8.0V

–10.0V

-0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5

Drain-to-Source Voltage, V

S

–6.0V

ID-

–4.0V

y

|

FW113

fs

V

–3.5V

|-I

DS

DS

D

Ta=–25˚C

75˚C

-10

-9

-8

A

-7

-

-6

D

-5

-4

–3.0V

=–

V

2.5V

GS

-3

Drain Current, I

-2

-1
0

- V Gate-to-Source Voltage, VDS-V

140

120

–mΩ

)

25˚C

100

on

DS (

80

60

40

VDS=–10V

=–2A

ID-

V

GS

75˚C

25˚C

Ta=–25˚C

-1.0 -1.5 -2.0 -2.5 -3.0 -4.0-3.5

R

(on)

-

DS

=–5A

D

D

I

I

V

GS

Tc=25˚C

Forwaard Transfer Addmittance,|

0.1
7

-0.01

2233557

-0.1

2357

Drain Current, ID-A

R

140

120

–mΩ

)

100

on

DS (

80

60

40

20

Static Drain-to-Source

ON-State Resistance, R

0

-60 -40

-20 0 20 40 60 80 100 120 140

DS

Case Temperature, Tc - ˚C

(on)

-1.0

2357

-

Tc

=–2A

I

D

=–5A,V

I

D

-10

,V

2357

=–4V

GS

=–10V

GS

-100

20

Static Drain-to-Source

ON-State Resistance, R

0

0-2

-4 -6 -8 -10 -12 -14 -16 -18 -20

Gate-to-Source Voltage,V

-10

VGS=0

7
5

3
2

-A

-1.0

F

7
5

3
2

-0.1
7

Forward Current, I

5
3

2

-0.01
0 -0.2 -0.4 -0.6 -0.8 -1.4-1.2-1.0

IF-

25˚C

Ta=75˚C

Diode Forward Voltage, VSD–V

25˚C

–

- V

GS

V

SD

No.5847-2/3