SANYO FW111 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Load S/W Applications

Ordering number:EN5909

FW111

Features

· 2.5V drive.

· Low ON resistance.

Package Dimensions

unit:mm

2129

[FW111]

58

0.3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

D

D
T

R
R

4.4

6.0

1:Source1
2:Gate1

14

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

0.2

3:Source2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1

SANYO:SOP8

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %123–A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm

SSD
SSG

)ffo(SG

1IDV,A5–=

)no(SD

2IDV,A2–=

)no(SD

I

SSD)RB(

D

V
V
V

V,Am1–=

0=02–V

SG

V,V02–=

SD
SG
SD

SD
SD
SD

0=001–Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01–=

Am1–=4.0–4.1–V

D

A5–=821S

D

V4–=4485mΩ

SG

V5.2–=5689mΩ

SG

zHM1=f,V01–=089Fp
zHM1=f,V01–=005Fp
zHM1=f,V01–=012Fp

2

×0.8mm)

sgnitaR

nimpytxam

Continued on next page.

02–V
01±V
5–A

7.1W

0.2W

˚C
˚C

tinU

D1498TS (KOTO) TA-1214 No.5909-1/4

FW111

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5Cn

egrahC"relliM"niarD-ot-etaGdgQ 7Cn

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

V

I

DS

S

V,V01–=

SD

V,A5–=

0=0.1–5.1–V

SG

Switching Time Test Circuit

VDD=–10V

ID=–5A
RL=2

D

Ω

V

OUT

0V

–4V

PW=10µs
D.C.

V

IN

V

IN

≤

1%

G

tiucriCtseTdeificepSeeS02sn
tiucriCtseTdeificepSeeS511sn
tiucriCtseTdeificepSeeS011sn
tiucriCtseTdeificepSeeS501sn

I,V01–=

SG

D

sgnitaR

nimpytxam

03Cn

A5–=

tinU

–A

D

P.G

-6

-6V

-5

-4

-3

-2

-4V

-8V

-3V

ID-

-2.5V

50

-2V

Ω

S

V

DS

Drain Current, I

-1

0

0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

Drain-to-Source Voltage,VDS–V

y

|

fs

|

-

I

Ta=

-

25˚C

75˚C

-1.0

D

23 257

100

VDS=-10V

7
5

–S

|

3

fs

2

y

|

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance,

0.1

-0.01

23 57

-0.1

Drain Current, ID–A

23 57

FW111

VGS=-1.5V

25˚C

-10

-10

VDS=-10V

-9

-8

-7

–A

D

-6

-5

-4

-3

Drain Current, I

-2

-1
0

0 -0.5 -1.0 -1.5 -2.0 -2.5

ID-

Gate-to-Source Voltage, V

R

100

90
80

–mΩ

)

70

on

60

DS (

50
40
30
20
10

Static Drain-to-Source

On-State Resistance, R

0

-2A

0-1-2-3-4-5-6-7-8-9-10

DS

ID=-5A

Gate-to-Source Voltage, V

(on)

25˚C

V

GS

75˚C

25˚C

-

Ta=

GS

-

V

GS

GS

–V

Ta=25˚C

–V

No.5909-2/4