SANYO FTS2012 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6360
FTS2012
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.425
Features
· Low ON resistance.
· 4V drive.
· Mounting height 1.1mm.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : S2012 Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %123A
PD
Mounted on a ceramic board (1000mm2×0.8mm)
D
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,A8=
2)no(IDV,A4=
SD
SD
SD
Package Dimensions
unit:mm
2147A
4.5 0.95
(0.95)
6.4
[FTS2012]
0.5
1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
0.125
8 : Drain
SANYO : TSSOP8
sgnitaR
nimpytxam
03V
02±V
8A
3.1W
˚C
˚C
0.65
V,Am1=
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A8=8.941S
D
V01=4191mΩ
SG
V4=2213mΩ
SG
zHM1=f,V01=0551Fp
zHM1=f,V01=053Fp
zHM1=f,V01=022Fp
3.0
85
14
0.25
tinU
30300TS (KOTO) TA-1937 No.6360-1/4
FTS2012
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
Switching Time Test Circuit
VDD=15V
V
IN
10V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=8A
RL=1.87Ω
)no(tiucriCtseTdeificepseeS21sn
d
r
)ffo(tiucriCtseTdeificepseeS011sn
d
f
SG
SG
I
DS
S
V
OUT
SG
V,A8=
0=28.02.1V
SG
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS59sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A8=04Cn
A8=5Cn
A8=7Cn
tinU
P.G
15
10.0V
12
6.0V
50Ω
I
D
3.5V
4.0V
3.0V
-- V
S
DS
–A
D
9
6
Drain Current, I
3
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
60
50
–mΩ
40
DS(on)
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
8A
ID=4A
240 6 12 14 16 18 20108
Gate-to-Source Voltage, V
GS
GS
FTS2012
VGS=2.5V
Ta=25°C
–V
IT00732
IT00734
16
14
12
–A
10
D
8
6
Drain Current, I
4
2
0
0
40
35
30
–mΩ
25
DS(on)
20
15
10
5
Static Drain-to-Source
On-State Resistance, R
0
Gate-to-Source Voltage, VGS–V
--25--50
I
-- V
D
GS
Ta=75°C
1.51.00.5 2.5 3.0
2.0
RDS(on) -- Ta
=4V
GS
=4A, V
I
D
=10V
GS
=8A, V
I
D
0
Ambient Temperature, Ta – ˚C
VDS=10V
C
°
--25
C
°
25
IT00733
IT00735
150125100755025
No.6360-2/4
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