SANYO FTS2012 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6360

FTS2012

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 4V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S2012 Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %123A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,A8=

2)no(IDV,A4=
SD

SD
SD

Package Dimensions

unit:mm

2147A

4.5 0.95

(0.95)

6.4

[FTS2012]

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source

0.125

8 : Drain
SANYO : TSSOP8

sgnitaR

nimpytxam

03V
02±V
8A

3.1W

˚C
˚C

0.65

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A8=8.941S

D

V01=4191mΩ

SG

V4=2213mΩ

SG

zHM1=f,V01=0551Fp
zHM1=f,V01=053Fp
zHM1=f,V01=022Fp

3.0

85

14

0.25

tinU

30300TS (KOTO) TA-1937 No.6360-1/4

FTS2012

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=8A
RL=1.87Ω

)no(tiucriCtseTdeificepseeS21sn

d

r

)ffo(tiucriCtseTdeificepseeS011sn

d

f

SG
SG

I

DS

S

V

OUT

SG

V,A8=

0=28.02.1V

SG

tiucriCtseTdeificepseeS012sn

tiucriCtseTdeificepseeS59sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A8=04Cn
A8=5Cn
A8=7Cn

tinU

P.G

15

10.0V

12

6.0V

50Ω

I

D

3.5V

4.0V

3.0V

-- V

S

DS

–A

D

9

6

Drain Current, I

3

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

60

50

–mΩ

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

8A

ID=4A

240 6 12 14 16 18 20108

Gate-to-Source Voltage, V

GS

GS

FTS2012

VGS=2.5V

Ta=25°C

–V

IT00732

IT00734

16

14

12

–A

10

D

8

6

Drain Current, I

4

2

0

0

40

35

30

–mΩ

25

DS(on)

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

Gate-to-Source Voltage, VGS–V

--25--50

I

-- V

D

GS

Ta=75°C

1.51.00.5 2.5 3.0

2.0

RDS(on) -- Ta

=4V

GS

=4A, V

I

D

=10V

GS

=8A, V

I

D

0

Ambient Temperature, Ta – ˚C

VDS=10V

C

°

--25

C

°

25

IT00733

IT00735

150125100755025

No.6360-2/4