SANYO FTS2003 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN5993A
FTS2003
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.425
Features
· Low ON resistance.
· 2.5V drive.
· Mount height of 1.1mm.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : S2003
D
D
R
R
Package Dimensions
unit:mm
2147A
0.65
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %152A
PD
Mounted on a ceramic board (1000mm2×0.8mm)
I
V,Am1=
0=02V
SG
V,V02=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
A4=701S
D
V4=8305mΩ
SG
V5.2=0507mΩ
SG
zHM1=f,V01=005Fp
zHM1=f,V01=082Fp
zHM1=f,V01=051Fp
SSD
SSG
)ffo(SG
1IDV,A4=
)no(SD
2IDV,A2=
)no(SD
SSD)RB(
D
V
SD
V
SG
V
SD
SD
SD
SD
3.0
85
14
0.25
[FTS2003]
6.4
4.5 0.95
(0.95)
0.5
1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain
0.125
SANYO : TSSOP8
sgnitaR
nimpytxam
Continued on next page.
02V
01±V
4A
3.1W
˚C
˚C
tinU
31000TS (KOTO) TA-2401 No.5993-1/4
FTS2003
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A4=
0=28.02.1V
SG
Switching Time Test Circuit
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS051sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A4=22Cn
A4=3Cn
A4=3Cn
tinU
ID-
2.0V
y
fs
VDD=10V
D
V
|
-
ID=4A
RL=2.5Ω
S
DS
I
Ta=–25
D
75°C
V
OUT
TS2003
F
VGS=1.5V
°C
VDS=10V
25°C
ID-
V
10
–A
D
Drain Current, I
VDS=10V
9
8
7
6
5
4
3
2
1
0
GS
25°C
75°C
°C
Ta=–25
Gate-to-Source Voltage, VGS–V
R
I
D
DS(on)
=4A
100
90
80
=2A
I
D
–mΩ
70
60
DS(on)
50
40
30
20
Static Drain-to-Source
On-State Resistance, R
10
0
012345678910
-
V
GS
V
IN
4V
0V
V
IN
PW=10µs
D.C.≤1%
G
–A
D
P.G
6
4.0V
5.0V
6.0V
5
8.0V
4
3
2
2.5V
50Ω
3.5V
3.0V
Drain Current, I
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5
Drain-to-Source Voltage, VDS–V
100
7
5
3
fs|–S
2
y
10
7
5
3
2
1
7
5
3
2
Forward Transfer Admittance, |
0.1
23 57 23 57 2 2357
|
0.10.01 1.0 10
Drain Current, ID– A Gate-to-Source Voltage, VGS–V
Ta=25°C
No.5993-2/4
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