SANYO FTS1001 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6093A

FTS1001

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S1001 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %102–A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A4–=

)no(SD

2IDV,A2–=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2147A

4.5 0.95

(0.95)

6.4

[FTS1001]

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain

0.125

SANYO : TSSOP8

sgnitaR

nimpytxam

02–V
01±V
4–A

5.1W

˚C
˚C

0.65

V,Am1–=

0=02–V

SG

V,V02–=

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01–=

D

A4–=801S

D

V4–=5485mΩ

SG
SG

3.0

85

14

0.25

Am1–=4.0–4.1–V

V5.2–=5689mΩ
zHM1=f,V01–=089Fp
zHM1=f,V01–=005Fp
zHM1=f,V01–=012Fp

tinU

52200TS (KOTO) TA-1447 No.6093-1/4

FTS1001

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A4–=

DS

S

0=0.1–5.1–V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS001sn
tiucriCtseTdeificepseeS511sn
tiucriCtseTdeificepseeS011sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

sgnitaR

nimpytxam

A4–=03Cn

D

A4–=5Cn

D

A4–=7Cn

D

tinU

50Ω

ID-

-2.0V

VDD=—10V

ID=—4A
RL=2.5Ω

D

S

V

DS

TS1001

F

-4.5

-4.0

-3.5

-3.0

–A

D

-2.5

0V

—4V

P.G

V

IN

PW=10µs
D.C.≤1%

-8.0V

V

IN

-2.5V

G

-6.0V

-2.0

-1.5

Drain Current, I

-1.0

-0.5

0

0

-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

-4.0V

-3.0V

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

Ta=-25

D

°C

75°C

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57 23 57 2 2357

-0.01 -0.1 -1.0 -10

Drain Current, ID–A

V

OUT

VGS=-1.5V

VDS=-10V

25°C

-8

VDS=-10V

-7

-6

–A

-5

D

-4

-3

Drain Current, I

-2

-1

0

0

-0.5 -1.0 -1.5 -2.0 -2.5

Gate-to-Source Voltage, VGS–V

100

90

80

–mΩ

70

ID=-2A

60

DS(on)

50

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

-10 -2-3-4-5-6-7-8-9-10

Gate-to-Source Voltage, VGS–V

R

DS(on)

ID=-4A

ID-

25°C

V

-

GS

75°C

Ta=-25

V

GS

°C

Ta=25°C

No.6093-2/4