SANYO FTD1014 Datasheet

Ordering number : ENN7020
FTD1014
P-Channel Silicon MOSFET
FTD1014
Load S / W Use
[FTD1014]
0.425
0.5
6.4
4.5 0.95
Features
Low ON-resistance.
2.5V drive.
Mounting height 1.1mm.
Composite type, facilitating high-density mounting.
Load Switching Applications
Package Dimensions
unit : mm
2155A
3.0
0.65
85
1 : Drain1 2 : Source1 3 : Source1
0.125
4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2
SANYO : TSSOP8
Specifications
14
0.25
(0.95)
1.0
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Total Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D T
PW10µs, duty cycle1% --15 A Mounted on a ceramic board (1000mm2✕0.8mm) 1unit Mounted on a ceramic board (1000mm2✕0.8mm)
--20 V
±10 V
--2 A
0.8 W
1.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance
(BR)DSSID
DSS GSS
yfs
=--1mA, VGS=0 --20 V VDS=--20V, VGS=0 --1 µA VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--2A 4.2 6 S
Marking : D1014 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
73001 TS IM TA-2736
No.7020-1/4
FTD1014
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=--10V, f=1MHz 820 pF
Output Capacitance Coss VDS=--10V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 100 pF Turn-ON Delay Time td(on) See specified Test Circuit 17 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 66 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2A 17 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 1.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 2 nC Diode Forward Voltage V
RDS(on) 1 ID=--2A, VGS=--4V 68 89 m RDS(on) 2 ID=--2A, VGS=--2.5V 92 130 m
See specified Test Circuit 60 ns
r
See specified Test Circuit 56 ns
f
SD
IS=--2A, VGS=0 --0.8 --1.5 V
Ratings
min typ max
Unit
Switching Time Test Circuit Electrical Connection
V
IN
0V
--4V V
IN
PW=10µs D.C.1%
P.G
--6
I
D
G
50
-- V
DS
VDD= --10V
ID= --2A RL=5
D
S
V
OUT
FTD1014
D2 S2 S2 G2
D1 S1 S1 G1
--6
VDS= --10V
--6.0V
--4.0V
--5
--10.0V
--3.0V
--5
--2.5V
--4
-- A D
--3
--2
--2.0V
Drain Current, I
--1
0
0 --0.2--0.1 --0.4--0.3 --0.6--0.5 --0.8--0.7 --1.0--0.9
Drain-to-Source V oltage, VDS -- V
200
RDS(on) -- V
GS
VGS= --1.5V
IT00392
Ta=25°C
--4
-- A D
--3
--2
Drain Current, I
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5
Gate-to-Source V oltage, VGS -- V
200
ID= --2.0A
I
-- V
D
GS
--25°C
°C
Ta=75
°C
25
RDS(on) -- Ta
IT00393
150
(on) -- m
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
0--5--1 --4 --7--2 --6--3 --8 --9 --10
Gate-to-Source V oltage, VGS -- V
IT00394
150
(on) -- m
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
GS
V
V
GS
= --2.5V, I
= --4.0V, I
= --2.0A
D
= --2.0A
D
Ambient Temperature, Ta -- °C
IT00395
No.7020-2/4
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