SANYO FTD1012 Datasheet
Ordering number : ENN7000
FTD1012
P-Channel Silicon MOSFET
FTD1012
Load Switching Applications
Features
•
Low ON-resistance.
• 4V drive.
• Mounting height 1.1mm.
• Composite type, facilitating high-density mounting.
Package Dimensions
unit : mm
2155A
[FTD1012]
3.0
0.65
85
6.4
4.5 0.95
0.425
0.5
1 : Drain1
2 : Source1
3 : Source1
14
0.25
(0.95)
1.0
0.125
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
Specifications
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
T
PW≤10µs, duty cycle≤1% --15 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
Mounted on a ceramic board (1000mm2✕0.8mm)
--30 V
±20 V
--3 A
0.8 W
1.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--3A 3.8 5.5 S
Marking : D1012 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71001 TS IM TA-2300
No.7000-1/4
FTD1012
Continued from preceding page.
Parameter Symbol Conditions
RDS(on) 1 ID=--3A, VGS=--10V 50 65 mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 250 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 160 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 55 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 19 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 4 nC
Diode Forward Voltage V
RDS(on) 2 ID=--2A, VGS=--4.5V 80 110 mΩ
RDS(on) 3 ID=--2A, VGS=--4V 85 120 mΩ
See specified Test Circuit 30 ns
r
See specified Test Circuit 50 ns
f
SD
IS=--3A, VGS=0 --1.0 --1.5 V
Ratings
min typ max
Unit
DS
VDD= --15V
D
V
DS
GS
GS
-- V
ID= --3A
RL=5Ω
S
= --2.5V
Ta=25°C
FTD1012
IT02537
V
OUT
D2 S2 S2 G2
D1 S1 S1 G1
--8
VDS= --10V
--7
--6
-- A
--5
D
--4
--3
Drain Current, I
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --3.5--2.5 --3.0
Gate-to-Source V oltage, V
140
120
-- mΩ
100
(on)
DS
80
60
40
I
Switching Time Test Circuit Electrical Connection
V
IN
0V
--10V
V
IN
PW=10µs
D.C.≤1%
P.G
--6
--5
--6.0V
--4.5V
--8.0V
-- A
--4
D
--3
--2
--10.0V
Drain Current, I
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source V oltage, V
RDS(on) -- V
--3A
-- mΩ
(on)
DS
140
120
100
80
60
40
ID= --2A
I
D
--3.0V
G
50Ω
-- V
--4.0V
I
-- V
D
GS
25°C
Ta=75°C
RDS(on) -- Ta
= --4.0V
GS
= --2A, V
I
D
= --2A, V
I
D
= --3A, V
D
GS
= --10.0V
GS
= --4.5V
GS
--25°C
-- V
IT02538
20
Static Drain-to-Source
On-State Resistance, R
0
0 --4 --8 --12 --16 --20--2 --6 --10 --14 --18
Gate-to-Source V oltage, V
GS
-- V
IT02539
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
Ambient Temperature, Ta -- °C
IT02540
No.7000-2/4
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