SANYO FTD1011 Datasheet

Ordering number : ENN6593

FTD1011

P-Channel Silicon MOSFET

FTD1011

Ultrahigh-Speed Switching Applications

Features

• Low ON-resistance.

•

2.5V drive.

• Mount height of 1.1mm.

• Composite type, facilitating high-density mounting.

Package Dimensions

unit : mm

2155A

[FTD1011]

3.0

0.65

85

4.5 0.95

0.425

6.4

0.5

1 : Drain1
2 : Source1
3 : Source1

0.125

4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2

SANYO : TSSOP8

Specifications

14

0.25

(0.95)

1.0

0.1

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Total Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D
T

PW≤10µs, duty cycle≤1% --15 A
Mounted on a ceramic board (1000mm2✕0.8mm)1unit
Mounted on a ceramic board (1000mm2✕0.8mm)

--20 V
±10 V

--3 A

0.8 W

1.0 W

Electrical Characteristics at T a=25 °C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance

Static Drain-to-Sourse on-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=--3A, VGS=--4V 50 65 mΩ
RDS(on)2 ID=--2A, VGS=--2.5V 68 96 mΩ

=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--3A 6 8.8 S

min typ max

Marking : D1011 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71400 TS IM TA-2725

No.6593-1/4

FTD1011

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 190 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 65 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 23 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1.6 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 2.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 110 ns

r

See specified Test Circuit 75 ns

f

IS=--3A, VGS=0 --0.8 --1.5 V

min typ max

Switching Time Test Circuit Electrical Connection

Ratings

Unit

0V

--4V

PW=10µs
D.C.≤1%

P.G

--6

--5

--4

-- A
D

--3

--2

Drain Current, I

--1

0

0

160

140

VDD= --10V

V

IN

V

IN

G

50Ω

I

-- V

D

D

DS

ID= --3A
RL=3.3Ω

S

V

OUT

--2.5V

--2.0V

--3.0V

--4.0V

--0.2--0.1 --0.3 --0.4 --0.6--0.5 --0.8 --0.9 --1.0

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

VGS= --1.5V

--0.7

IT02298

GS

Ta=25°C

D2 S2 S2 G2

D1 S1 S1 G1

--6

VDS=10V

--5

--4

-- A
D

--3

--2

Drain Current, I

--1

0

0

--0.2 --0.6 --1.6--1.0--0.8

160

140

I

-- V

D

GS

25°C

Ta=75°C

--0.4 --1.4--1.2 --2.0--1.8

Gate-to-Source V oltage, VGS -- V

--25°C

IT02299

RDS(on) -- Ta

120

(on) -- mΩ

ID= --2A

100

DS

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

--2 --40 --6 --10--8

--3A

Gate-to-Source V oltage, VGS -- V

120

(on) -- mΩ

100

DS

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

IT02300 IT02301

--40 --20--60

= --2A, V

I

D

= --3A, V

I

D

0

Ambient Temperature, Ta -- °C

GS

GS

= --2.5V

= --4.0V

No.6593-2/4

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