SANYO FSS250 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6269

FSS250

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 4V drive.

· Ultrahigh-speed switching.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

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Marking : S250

D

D

R
R

Package Dimensions

unit:mm

2116

[FSS250]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

I

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A7=701S

D

V01=5233mΩ

SG

V5.4=8345mΩ

SG

zHM1=f,V01=035Fp
zHM1=f,V01=071Fp
zHM1=f,V01=09Fp

SSD
SSG

)ffo(SG

1IDV,A7=

)no(SD

2IDV,A4=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source
3 : Source

0.2

4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

sgnitaR

Continued on next page.

03V
02±V
7A

8.1W

˚C
˚C

tinU

21400TS (KOTO) TA-2167 No.6269-1/4

FSS250

Continued from preceding page.

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emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A7=

0=28.02.1V

SG

Switching Time Test Circuit

VDD=15V

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

G

ID=7A

RL=2.1Ω

D

V

OUT

tiucriCtseTdeificepseeS9sn
tiucriCtseTdeificepseeS031sn
tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS06sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A7=01Cn
A7=5.1Cn
A7=0.1Cn

tinU

P.G

10

9

8

8.0V

7

–A

6.0V

6

D

5

4

3

Drain Current, I

2

1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

60
55

50
45

ID=4A

–mΩ

40
35

DS(on)

30
25
20
15
10

5

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

50Ω

I

-- V

D

10.0V

4.5V

3.5V

3.0V

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

7A

Gate-to-Source Voltage, V

S

DS

FSS250

GS

GS

VGS=2.5V

–V

IT00546

Ta=25°C

IT00548

I

-- V

10

9

8

7

–A

D

6

5
4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0

60

50

–mΩ

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--50 --25 0 25 50 75 100 125 150

Gate-to-Source Voltage, VGS–V

D

RDS(on) -- Ta

D

I

=4A, V

=7A, V

I

D

GS

GS

=4.5V

GS

Ta=--25°C

25°C

=10.0V

75°C

Ambient Temperature, Ta – ˚C

VDS=10V

IT00547

IT00549

No.6269-2/4