SANYO FSS244 Datasheet

Ordering number : ENN6938

FSS244

N-Channel Silicon MOSFET

FSS244

DC / DC Converter Applications

Features

•

Low ON-resistance.

• 4V drive.

• Ultrahigh speed switching.

Package Dimensions

unit : mm

2116

[FSS244]

58

4.4

0.3

6.0

1 : Source
2 : Source
3 : Source

14

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

4 : Gate

0.2

5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit

30 V

±20 V

10 A

2.0 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=10A 12 18 S

Marking : S244 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42501 TS IM TA-1941

No.6938-1/4

FSS244

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 980 pF

Output Capacitance Coss VDS=10V , f=1MHz 410 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 170 pF
Turn-ON Delay Time td(on) See specified Test Circuit 11 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 80 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=10A 17 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=10A 3.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=10A 1.7 nC
Diode Forward Voltage V

RDS(on)1 ID=10A, VGS=10V 13 17 mΩ
RDS(on)2 ID=4A, VGS=4.5V 20 28 mΩ

See specified Test Circuit 210 ns

r

See specified Test Circuit 85 ns

f

SD

IS=10A, VGS=0 0.8 1.2 V

Switching Time Test Circuit

VDD=15V

V

10V

0V

PW=10µs
D.C.≤1%

in

V

in

G

D

ID=10A

RL=1.5Ω

V

OUT

Ratings

min typ max

Unit

P.G

10

9

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

10.0V

8.0V

4.5V

6.0V

3.5V

Drain-to-Source V oltage, V

60
55
50

-- mΩ

45

(on)

40

DS

35
30
25

ID=4A

20
15
10

Static Drain-to-Source

On-State Resistance, R

5
0

02468101214161820

RDS(on) -- V

10A

Gate-to-Source V oltage, V

I

D

3.0V

50Ω

-- V

DS

DS

GS

GS

S

VGS=2.5V

-- V

-- V

FSS244

I

-- V

16

14

12

-- A

10

D

8

6

Drain Current, I

4

2

0

IT00535 IT00536

Ta=25°C

IT00537 IT00538

0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0

60

50

-- mΩ
(on)

40

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 160140

Gate-to-Source V oltage, V

Ambient Temperature, Ta -- °C

D

RDS(on) -- Ta

=4.5V, I

V

GS

=10.0V, I

V

GS

25°C

D

GS

Ta=75°C

=4A

D

--25°C

=10A

GS

VDS=10V

-- V

No.6938-2/4