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Ordering number : ENN6938
FSS244
N-Channel Silicon MOSFET
FSS244
DC / DC Converter Applications
Features
•
Low ON-resistance.
• 4V drive.
• Ultrahigh speed switching.
Package Dimensions
unit : mm
2116
[FSS244]
58
4.4
0.3
6.0
1 : Source
2 : Source
3 : Source
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
4 : Gate
0.2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
30 V
±20 V
10 A
2.0 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=10A 12 18 S
Marking : S244 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42501 TS IM TA-1941
No.6938-1/4
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FSS244
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 980 pF
Output Capacitance Coss VDS=10V , f=1MHz 410 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 170 pF
Turn-ON Delay Time td(on) See specified Test Circuit 11 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 80 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=10A 17 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=10A 3.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=10A 1.7 nC
Diode Forward Voltage V
RDS(on)1 ID=10A, VGS=10V 13 17 mΩ
RDS(on)2 ID=4A, VGS=4.5V 20 28 mΩ
See specified Test Circuit 210 ns
r
See specified Test Circuit 85 ns
f
SD
IS=10A, VGS=0 0.8 1.2 V
Switching Time Test Circuit
VDD=15V
V
10V
0V
PW=10µs
D.C.≤1%
in
V
in
G
D
ID=10A
RL=1.5Ω
V
OUT
Ratings
min typ max
Unit
P.G
10
9
8
7
-- A
D
6
5
4
3
Drain Current, I
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
10.0V
8.0V
4.5V
6.0V
3.5V
Drain-to-Source V oltage, V
60
55
50
-- mΩ
45
(on)
40
DS
35
30
25
ID=4A
20
15
10
Static Drain-to-Source
On-State Resistance, R
5
0
02468101214161820
RDS(on) -- V
10A
Gate-to-Source V oltage, V
I
D
3.0V
50Ω
-- V
DS
DS
GS
GS
S
VGS=2.5V
-- V
-- V
FSS244
I
-- V
16
14
12
-- A
10
D
8
6
Drain Current, I
4
2
0
IT00535 IT00536
Ta=25°C
IT00537 IT00538
0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0
60
50
-- mΩ
(on)
40
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
Gate-to-Source V oltage, V
Ambient Temperature, Ta -- °C
D
RDS(on) -- Ta
=4.5V, I
V
GS
=10.0V, I
V
GS
25°C
D
GS
Ta=75°C
=4A
D
--25°C
=10A
GS
VDS=10V
-- V
No.6938-2/4