SANYO FSS242 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6259
FSS242
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· 4V drive.
· Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : S242
D
D
R
R
Package Dimensions
unit:mm
2116
[FSS242]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %125A
PD
Mounted on a ceramic board (1000mm2×0.8mm)
I
V,Am1=
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01=
Am1=0.14.2V
D
A8=931S
D
V01=0262mΩ
SG
V5.4=8204mΩ
SG
zHM1=f,V01=057Fp
zHM1=f,V01=082Fp
zHM1=f,V01=021Fp
SSD
SSG
)ffo(SG
1IDV,A8=
)no(SD
2IDV,A4=
)no(SD
SSD)RB(
D
V
SD
V
SG
V
SD
SD
SD
SD
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
03V
02±V
8A
8.1W
˚C
˚C
tinU
21400TS (KOTO) TA-2168 No.6259-1/4
FSS242
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A8=
0=28.02.1V
SG
Switching Time Test Circuit
VDD=15V
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS691sn
tiucriCtseTdeificepseeS15sn
tiucriCtseTdeificepseeS06sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A8=41Cn
A8=5.2Cn
A8=3.1Cn
tinU
3.0V
D
DS
ID=8A
RL=1.88Ω
S
GS
GS
V
OUT
FSS242
VGS=2.5V
–V
V
IN
10V
0V
V
PW=10µs
D.C.≤1%
P.G
10
9
8.0V
8
7
–A
D
Drain Current, I
–mΩ
DS(on)
Static Drain-to-Source
On-State Resistance, R
10.0V
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
60
55
50
45
40
35
30
25
20
15
10
5
0
0 2 4 6 8 101214161820
Drain-to-Source Voltage, VDS–V
ID=4A
IN
G
50Ω
I
-- V
D
4.5V
3.5V
6.0V
RDS(on) -- V
8A
Gate-to-Source Voltage, V
I
-- V
12
10
8
–A
D
6
4
D
Drain Current, I
2
0
IT00524
Ta=25°C
IT00526 IT00527
0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0
60
50
–mΩ
40
DS(on)
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS–V
RDS(on) -- Ta
=4A, V
I
D
=8A, V
I
D
Ambient Temperature, Ta – ˚C
Ta=75
GS
GS
GS
°C
°C
--25
=4.5V
=10.0V
VDS=10V
25°C
IT00525
No.6259-2/4
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