SANYO FSS239 Technical data

FSS239

Ordering number : ENN6582

FSS239

N-Channel Silicon MOSFET

FSS239

Load Switching Applications

Features

•Low ON resistance.

•2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2185

[FSS239]

8

5

4.4

1		4
	5.0	1.8max
		1.5

0.595	1.27	0.43	0.1

0.3
6.0
	1	: No Contact
	2	: Source
	3	: Source
0.2	4	: Gate
	5	: Drain
	6	: Drain
	7	: Drain
	8	: Drain
	SANYO : SOP8

Parameter	Symbol	Conditions			Ratings			Unit
Drain-to-Source Voltage	VDSS						20	V
Gate-to-Source Voltage	VGSS						±10	V
Drain Current (DC)	ID						7	A
Drain Current (Pulse)	IDP	PW≤10μs, duty cycle≤1%					52	A
Allowable Power Dissipation	PD	Mounted on a ceramic board (1000mm2 0.8mm)					1.8	W
Channel Temperature	Tch						150	°C
Storage Temperature	Tstg				--55 to +150			°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions			Ratings			Unit
				min	typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		20				V
Zero-Gate Voltage Drain Current	IDSS	VDS=20V, VGS=0					1	μA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0					±10	μA
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA		0.4			1.3	V
Forward Transfer Admittance	|yfs|	VDS=10V, ID=7A		10.9	15.5			S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=7A, VGS=4V			24		32	mΩ
	RDS(on)2	ID=2A, VGS=2.5V			29		42	mΩ
Marking : S239					Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52600 TS IM TA-2977 No.6582-1/4

FSS239

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=10V, f=1MHz		900		pF
Output Capacitance	Coss	VDS=10V, f=1MHz		260		pF
Reverse Transfer Capacitance	Crss	VDS=10V, f=1MHz		200		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		15		ns
Rise Time	tr	See specified Test Circuit		220		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		75		ns
Fall Time	tf	See specified Test Circuit		180		ns
Total Gate Charge	Qg	VDS=10V, VGS=10V, ID=7A		32		nC
Gate-to-Source Charge	Qgs	VDS=10V, VGS=10V, ID=7A		1.7		nC
Gate-to-Drain ”Miller” Charge	Qgd	VDS=10V, VGS=10V, ID=7A		6.4		nC
Diode Forward Voltage	VSD	IS=7A, VGS=0		0.86	1.2	V

Switching Time Test Circuit

	VDD=10V
VIN			ID=7A
4V
0V			RL=1.43Ω
VIN	D		VOUT
PW=10µs
D.C.≤ 1%
	G
P.G	50Ω
			FSS239
		S

	10				ID -- VDS
		0V	0V
		.
	9	4	.
			2
	8		5V
			.
A	7		2
			0V
--
			.
D	6		3
I			5V
Current,
	5		.					1.5V
			3
	4
Drain	3
	2
	1					V		=1.0V
	0						GS
	0		0.5	1.0	1.5	2.0	2.5		3.0

						Drain-to-Source Voltage, VDS						-- V			IT02366
		70						RDS(on) -- VGS
													Ta=25°C
	Ω	60
	m
	--
	(on)	50
Source-to-DrainStatic	DS	40
	Resistance,StateonR
				ID=2A			7A
		30
		20
		10
		0
		0		2		4			6	8		10			12
						Gate-to-Source Voltage, VGS						-- V			IT02368

Drain Current, ID -- A

	mΩ
	--
	(on)
Static Drain-to-Source	DS
	on State Resistance, R

10										ID -- VGS
9	VDS=10V
8
7
6
5
4
																		Ta=75	°	C					C
3
																								°
2																						--		25
1																				°		C
																				25
0
0		0.2			0.4			0.6		0.8			1.0			1.2				1.4				1.6			1.8			2.0
					Gate-to-Source Voltage, VGS																		-- V					IT02367
60									RDS(on) -- Ta
50
40
																		.5V
																=2
											I =2A,				VGS
																		=4V
												D
30												I	=7A,			VGS
												D
20
10
0
--50		--25			0					25			50			75							100				125			150
						Ambient Temperature, Ta -- °C																						IT02369
																										No.6582-2/4