SANYO FSS239 Technical data

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

查询FSS239供应商

Ordering number : ENN6582

FSS239

N-Channel Silicon MOSFET

FSS239

Load Switching Applications

Features

•

Low ON resistance.

• 2.5V drive.

Specifications

Package Dimensions

unit : mm

2185

[FSS239]

58

4.4

14

5.0

1.8max

1.5

0.595

1.27

0.43

0.1

0.3

6.0

1 : No Contact
2 : Source
3 : Source

0.2

4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature Tch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1.8 W

20 V

±10 V

7A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance |yfs| VDS=10V, ID=7A 10.9 15.5 S

Static Drain-to-Source On-State Resistance

Marking : S239 Continued on next page.

(BR)DSSID

DSS
GSS

RDS(on)1 ID=7A, VGS=4V 24 32 mΩ
RDS(on)2 ID=2A, VGS=2.5V 29 42 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

52600 TS IM TA-2977

No.6582-1/4

FSS239

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 900 pF
Output Capacitance Coss VDS=10V , f=1MHz 260 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 200 pF
Turn-ON Delay Time td(on) See specified Test Circuit 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 75 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=7A 32 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=7A 1.7 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=7A 6.4 nC
Diode Forward Voltage V

SD

See specified Test Circuit 220 ns

r

See specified Test Circuit 180 ns

f

IS=7A, VGS=0 0.86 1.2 V

Switching Time Test Circuit

VDD=10V

V
4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID=7A

RL=1.43Ω

V

OUT

Ratings

min typ max

Unit

P.G

10

9

4.0V

2.0V

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0

2.5V

3.0V

3.5V

I

D

50Ω

-- V

S

DS

V

Drain-to-Source V oltage, VDS -- V

70

60

RDS(on) -- V

GS

FSS239

=1.0V

GS

Ta=25°C

1.5V

IT02366

I

-- V

D

10

VDS=10V

9

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.01.8

GS

Ta=75°C

Gate-to-Source V oltage, VGS -- V

60

50

RDS(on) -- Ta

--25°C

25°C

IT02367

50

(on) -- mΩ

DS

40

ID=2A

30

20

10

Static Drain-to-Source

on State Resistance, R

0

0 2 4 6 8 10 12

7A

Gate-to-Source V oltage, VGS -- V

40

(on) -- mΩ

DS

30

20

10

Static Drain-to-Source

on State Resistance, R

0

--50 --25 0 25 50 75 100 125 150

IT02368 IT02369

Ambient Temperature, Ta -- °C

I

D

I

=2A, V

=7A, V

D

GS

=2.5V

=4V

GS

No.6582-2/4