SANYO FSS238 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6401
FSS238
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : S238
D
D
SG
R
SD
R
SD
Package Dimensions
unit:mm
2116
[FSS238]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %165A
PD
Mounted on a ceramic board (1200mm2×0.8mm)
SSD)RB(
SSD
SSG
)ffo(VSDI,V01=
1)no(IDV,A41=
2)no(IDV,A7=
I
V
V
V,Am1=
D
SD
SG
SD
SD
SD
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A41=1203S
D
V01=79mΩ
SG
V4=0141mΩ
SG
zHM1=f,V01=0073Fp
zHM1=f,V01=038Fp
zHM1=f,V01=005Fp
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
03V
02±V
41A
0.2W
˚C
˚C
tinU
30300TS (KOTO) TA-2524 No.6401-1/4
FSS238
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A41=
0=87.02.1V
SG
Switching Time Test Circuit
VDD=15V
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS073sn
tiucriCtseTdeificepseeS082sn
tiucriCtseTdeificepseeS042sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A41=011Cn
A41=61Cn
A41=02Cn
tinU
D
DS
ID=14A
RL=1.07Ω
S
GS
V
OUT
FSS238
VGS=2.0V
IT01293
Ta=25°C
I
-- V
D
C
°
Ta=75
GS
VDS=10V
°C
--25
25°C
20
18
16
14
– A
D
12
10
8
6
Drain Current, I
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS– V
30
RDS(on) -- Ta
IT01294
V
IN
10V
0V
V
0.2
4.0V
0.3
IN
3.5V
G
50Ω
I
-- V
D
3.0V
0.5 0.70.1 0.4 0.6 0.8 0.9 1.0
PW=10µs
D.C.≤1%
P.G
20
18
6.0V
16
8.0V
14
– A
D
12
10.0V
10
8
6
Drain Current, I
4
2
0
0
Drain-to-Source Voltage, VDS– V
30
RDS(on) -- V
25
– mΩ
20
(on)
DS
15
10
5
Static Drain-to-Source
On-State Resistance, R
0
14A
=7A
I
D
0246
Gate-to-Source Voltage, V
10 12 14 16 18 20
8
GS
– V
IT01295
25
– mΩ
20
(on)
DS
15
10
5
Static Drain-to-Source
On-State Resistance, R
0
--50
--25 0 25 50 75 100 125 150
Ambient Temperature, Ta –˚C
=7A, V
I
D
I
D
=14A, V
GS
=4V
GS
=10V
IT01296
No.6401-2/4
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