Sanyo FSS237 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6149
FSS237
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Ultralow ON resistance.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : S237
D
D
R
R
Package Dimensions
unit:mm
2116
[FSS237]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %125A
PD
Mounted on a ceramic board (1200mm2×0.8mm)
SSD
SSG
)ffo(SG
1IDV,A41=
)no(SD
2IDV,A7=
)no(SD
I
SSD)RB(
V
V
V
V,Am1=
D
SD
SG
SD
SD
SD
SD
0=02V
SG
V,V02=
0=1Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
A41=0354S
D
V4=5.69mΩ
SG
V5.2=921mΩ
SG
zHM1=f,V01=0015Fp
zHM1=f,V01=0041Fp
zHM1=f,V01=059Fp
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
02V
01±V
41A
0.2W
˚C
˚C
tinU
D1099TS (KOTO) TA-2286 No.6149-1/4
FSS237
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A41=
0=8.02.1V
SG
Switching Time Test Circuit
=
10V
V
V
4V
0V
PW=10µs
D.C.
IN
V
IN
≤
1%
G
DD
D
I
=
14A
D
R
=
0.71
Ω
L
V
OUT
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS057sn
tiucriCtseTdeificepseeS074sn
tiucriCtseTdeificepseeS046sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A41=061Cn
A41=4.9Cn
A41=8.42Cn
tinU
P.G
20
18
4.0V
16
14
– A
D
12
10
8
6
Drain Current, I
4
2
0
0
0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0
3.0V
2.5V
2.0V
3.5V
50
Ω
ID-
V
DS
Drain-to-Source Voltage, VDS– V
y
|
fs
|
Ta=
-
-
25°C
75°C
100
7
5
fs | – S
y
3
2
10
7
5
3
2
Forward Transfer Admittance, |
1.0
0.1
1.0
Drain Current, ID– A
FSS237
S
ID-
V
GS
25°C
°C
75
25°C
-
Ta=
1.5V
VGS=1.0V
20
18
16
14
– A
D
12
10
Drain Current, I
VDS=10V
8
6
4
2
0
Gate-to-Source Voltage, VGS– V
-
V
GS
Ta=25°C
I
D
=14A
R
DS(on)
I
D
VDS=10V
25°C
10
53257325732
25
20
– mΩ
15
DS(on)
=7A
I
D
10
5
Static Drain-to-Source
On-State Resistance, R
0
0
12345678 10 12119
Gate-to-Source Voltage, VGS– V
No.6149-2/4
Loading...