Sanyo FSS234 Specifications

Ordering number : ENN6865

FSS234

N-Channel Silicon MOSFET

FSS234

DC / DC Converter Applications

Features

•

Low ON-resistance.

• 4.0V drive.

• Ultrahigh-speed switching.

Package Dimensions

unit : mm

2116

[FSS234]

58

4.4

0.3

6.0

1 : Source
2 : Source

14

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

3 : Source
4 : Gate

0.2

5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 W

30 V

±20 V

12 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=12A 12.6 18 S

Marking : S234 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22201 TS IM TA-2067

No.6865-1/4

FSS234

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 1450 pF

Output Capacitance Coss VDS=10V , f=1MHz 420 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 210 pF
Turn-ON Delay Time td(on) See specified Test Circuit 14 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 110 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=12A 28 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=12A 4.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=12A 5 nC
Diode Forward Voltage V

RDS(on)1 ID=12A, VGS=10V 9.5 13 mΩ
RDS(on)2 ID=4A, VGS=4.5V 13 19 mΩ

See specified Test Circuit 280 ns

r

See specified Test Circuit 100 ns

f

SD

IS=12A, VGS=0 0.81 1.2 V

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=12A
RL=1.25Ω

V

OUT

Ratings

min typ max

Unit

P.G

12

4.5V

10

3.5V

3.0V

I

D

50Ω

-- V

S

DS

6.0V

8

8.0V

-- A
D

10.0V

6

4

V

GS

Drain Current, I

2

0

0

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, VDS -- V

50

45

40

35

(on) -- mΩ

Static Drain-to-Source

On-State Resistance, R

4A

DS

30

25

20

15

10

5
0

0 2 4 6 8 101214161820

RDS(on) -- V

ID=12A

GS

Gate-to-Source V oltage, VGS -- V

FSS234

=2.5V

IT02766

Ta=25°C

IT02768

I

-- V

16

14

12

-- A

10

D

8

6

Drain Current, I

4

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

D

GS

Ta=75°C

Gate-to-Source V oltage, VGS -- V

40

35

30

(on) -- mΩ

25

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

--75 --50 --25 0 25 50 75 100 125 175150

RDS(on) -- Ta

=4.5V

GS

=4A, V

I

D

=12A, V

I

D

GS

=10V

Ambient Temperature, Ta -- °C

VDS=10V

--25°C

25°C

IT02767

IT02769

No.6865-2/4