Sanyo FSS234 Specifications

Page 1
Ordering number : ENN6865
FSS234
N-Channel Silicon MOSFET
FSS234
DC / DC Converter Applications
Features
Low ON-resistance.
4.0V drive.
Ultrahigh-speed switching.
Package Dimensions
unit : mm
2116
[FSS234]
58
4.4
0.3
6.0
1 : Source 2 : Source
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
3 : Source 4 : Gate
0.2
5 : Drain 6 : Drain 7 : Drain 8 : Drain
SANYO : SOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% 52 A Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 W
30 V
±20 V
12 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V Forward Transfer Admittance
(BR)DSSID
DSS GSS
yfs
=1mA, VGS=0 30 V VDS=30V , VGS=0 1 µA VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=12A 12.6 18 S
Marking : S234 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
22201 TS IM TA-2067
No.6865-1/4
Page 2
FSS234
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=10V , f=1MHz 1450 pF
Output Capacitance Coss VDS=10V , f=1MHz 420 pF Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 210 pF Turn-ON Delay Time td(on) See specified Test Circuit 14 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 110 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=12A 28 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=12A 4.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=12A 5 nC Diode Forward Voltage V
RDS(on)1 ID=12A, VGS=10V 9.5 13 m RDS(on)2 ID=4A, VGS=4.5V 13 19 m
See specified Test Circuit 280 ns
r
See specified Test Circuit 100 ns
f
SD
IS=12A, VGS=0 0.81 1.2 V
Switching Time Test Circuit
VDD=15V
V
IN
10V
0V
PW=10µs D.C.1%
V
IN
G
D
ID=12A RL=1.25
V
OUT
Ratings
min typ max
Unit
P.G
12
4.5V
10
3.5V
3.0V
I
D
50
-- V
S
DS
6.0V
8
8.0V
-- A D
10.0V
6
4
V
GS
Drain Current, I
2
0
0
0.2
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Drain-to-Source V oltage, VDS -- V
50
45
40
35
(on) -- m
Static Drain-to-Source
On-State Resistance, R
4A
DS
30
25
20
15
10
5 0
0 2 4 6 8 101214161820
RDS(on) -- V
ID=12A
GS
Gate-to-Source V oltage, VGS -- V
FSS234
=2.5V
IT02766
Ta=25°C
IT02768
I
-- V
16
14
12
-- A
10
D
8
6
Drain Current, I
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
D
GS
Ta=75°C
Gate-to-Source V oltage, VGS -- V
40
35
30
(on) -- m
25
DS
20
15
10
5
Static Drain-to-Source
On-State Resistance, R
0
--75 --50 --25 0 25 50 75 100 125 175150
RDS(on) -- Ta
=4.5V
GS
=4A, V
I
D
=12A, V
I
D
GS
=10V
Ambient Temperature, Ta -- °C
VDS=10V
--25°C
25°C
IT02767
IT02769
No.6865-2/4
Page 3
0.01
yfs -- I
Ta= --25°C
23 57
25°C
75°C
0.1
fs -- S
y
Forward Transfer Admittance,
100
0.01
10
1.0
0.1
0.001
7 5
3 2
7 5
3 2
7 5
3 2
7 5
3 2
23 57
Drain Current, I
SW Time -- I
t
1.0
Switching Time, SW Time -- ns
1000
100
VDS=15V
7
VGS=10V
5 3
2
7 5
3 2
10
7 5
3
0.1
23 57
Drain Current, I
10
VDS=10V ID=12A
9
8
-- V
7
GS
6
5
4
3
2
Gate-to-Source V oltage, V
1 0
0 2 4 6 8 10121416182022242628
VGS -- Qg
D
23 57
D
(off)
d
t
f
r
t
td(on)
23 57
D
23 571023
1.0
-- A
D
10
-- A
Total Gate Charge, Qg -- nC
P
-- Ta
2.5
D
VDS=10V
IT02770
23
IT02772
IT02774
FSS234
I
-- V
F
--25°C
SD
SD
-- V
DS
100
7 5
3 2
10
7 5
3
-- A
2
F
1.0 7 5
3 2
0.1 7 5
3 2
Forward Current, I
0.01 7 5
3 2
0.001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Ta=75°C
25°C
Diode Forward V oltage, V
10000
7 5
3 2
Ciss, Coss, Crss -- V
Ciss
1000
7 5
3
Ciss, Coss, Crss -- pF
2
100
7 5
0 5 10 15 20 25 30
Drain-to-Source V oltage, V
100
I
=52A
7
DP
5 3
2
I
=12A
D
10
7 5
-- A
3
D
2
1.0 7 5
3
Operation in this
2
area is limited by RDS(on).
Drain Current, I
0.1 7 5
Ta=25°C
3
Single pulse
2
Mounted on a ceramic board (1200mm
0.01 23 57
0.01
0.1
Drain-to-Source V oltage, V
Coss
Crss
A S O
23 57
100ms
DC operation
23 57
1.0
-- V
DS
<10µs
10ms
2
0.8mm)
10 100
-- V
DS
VGS=0
IT02771
f=1MHz
IT02773
100µs 1ms
23 57
IT02775
-- W
2.0
D
1.5
1.0
0.5
Allowable Power Dissipation, P
0020 40
Mounted on a ceramic board (1200mm
2
0.8mm)
60
80 100 120
Amibient Tamperature, Ta -- °C
140 160
IT02776
No.6865-3/4
Page 4
FSS234
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.
No.6865-4/4
PS
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