Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6359
FSS232
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : S232
D
D
R
R
Package Dimensions
unit:mm
2116
[FSS232]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %125A
PD
Mounted on a ceramic board (1000mm2×0.8mm)
I
V,Am1=
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01=
Am1=0.14.2V
D
A9=5.0151S
D
V01=5102mΩ
SG
V4=3233mΩ
SG
zHM1=f,V01=0551Fp
zHM1=f,V01=053Fp
zHM1=f,V01=022Fp
SSD
SSG
)ffo(SG
1IDV,A9=
)no(SD
2IDV,A4=
)no(SD
SSD)RB(
D
V
SD
V
SG
V
SD
SD
SD
SD
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
0.2
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
03V
02±V
9A
8.1W
˚C
˚C
tinU
30300TS (KOTO) TA-1939 No.6359-1/4
FSS232
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
SG
SG
I
DS
S
SG
V,A9=
0=38.02.1V
SG
Switching Time Test Circuit
VDD=15V
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS042sn
tiucriCtseTdeificepseeS011sn
tiucriCtseTdeificepseeS59sn
I,V01=
D
I,V01=
D
I,V01=
D
sgnitaR
nimpytxam
A9=04Cn
A9=5Cn
A9=7Cn
tinU
ID=9A
RL=1.67Ω
D
S
DS
15
12
V
10V
0V
PW=10µs
D.C.≤1%
P.G
6.0V
IN
10.0V
V
IN
G
50Ω
I
-- V
D
3.0V
3.5V
4.0V
–A
9
D
6
Drain Current, I
3
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS–V
60
50
RDS(on) -- V
GS
–mΩ
40
DS(on)
30
ID=4A
20
10
Static Drain-to-Source
On-State Resistance, R
9A
V
OUT
FSS232
VGS=2.5V
IT00755
Ta=25°C
I
-- V
16
14
12
–A
10
D
8
6
Drain Current, I
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
D
GS
Ta=75°C
Gate-to-Source Voltage, VGS–V
40
35
–mΩ
30
25
DS(on)
20
15
10
5
Static Drain-to-Source
On-State Resistance, R
RDS(on) -- Ta
=4A
D
=4V, I
V
GS
=10V, I
V
GS
D
=9A
VDS=10V
25°C
--25°C
IT00756
0
02468101214161820
Gate-to-Source Voltage, V
GS
–V
IT00757
0
--50 --25 0 25 50 75 100 125 150
Ambient Temperature, Ta – ˚C
IT00758
No.6359-2/4