SANYO FSS212 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN5933

FSS212

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

D

D

R
R

Package Dimensions

unit:mm

2116

[FSS212]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1200mm2×0.8mm)

I

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A8=821S

D

V01=1272mΩ

SG

V4=2485mΩ

SG

zHM1=f,V01=046Fp
zHM1=f,V01=083Fp
zHM1=f,V01=081Fp

SSD
SSG

)ffo(SG

1IDV,A8=

)no(SD

2IDV,A4=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source

0.2

3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8

sgnitaR

Continued on next page.

03V
42±V
8A

8.1W

˚C
˚C

tinU

31000TS (KOTO) TA-2551 No.5933-1/4

FSS212

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDI,V01=

egrahCecruoS-ot-etaGsgQVSDI,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDI,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

D
D

I

DS

S

D

V,A8=

0=58.02.1V

SG

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

ID=8A
RL=1.9Ω

D

V

OUT

tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS081sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS08sn

V,A8=

SG

V,A8=

SG

V,A8=

SG

sgnitaR

nimpytxam

V01=12Cn
V01=5Cn
V01=5Cn

tinU

P.G

10

9

8V

8

10V

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

6V

50Ω

ID-

4V

3.5V

V

DS

FSS212

S

Drain-to-Source Voltage, VDS–V

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57

0.01

yfs -- I

23 57

0.1

D

1.0

°C

25

-

Ta=

°C

75

23 2357

Drain Current, ID–A

3V

=2.5V

V

GS

VDS=-10V

°C

25

10

ID-

V

10

VDS=10V

9

8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0 4.03.5

GS

°C

75

°C

25

Gate-to-Source Voltage, VGS–V

-

R

I

D

DS(on)

=8A

60

50

–mΩ

DS(on)

Static Drain-to-Source

On-State Resistance, R

4A

40

30

20

10

0

0 2 4 6 8 101214161820

Gate-to-Source Voltage, V

V

GS

–V

GS

25

-

Ta=

°C

Ta=25

°C

No.5933-2/4