SANYO FSS207 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6346

FSS207

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S207

D

D

R
R

Package Dimensions

unit:mm

2116

[FSS207]

58

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

I

V,Am1=

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A01=3223S

D

V4=0131mΩ

SG

V5.2=5112mΩ

SG

zHM1=f,V01=0071Fp
zHM1=f,V01=0021Fp
zHM1=f,V01=086Fp

SSD
SSG

)ffo(SG

1IDV,A01=

)no(SD

2IDV,A2=

)no(SD

SSD)RB(

D

V

SD

V

SG

V

SD

SD
SD
SD

0.43

0.1

nimpytxam

6.0

1 : Source
2 : Source

0.2

3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8

sgnitaR

Continued on next page.

02V
01±V
01A

2W

˚C
˚C

tinU

31000TS (KOTO) TA-1507 No.6346-1/4

FSS207

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A01=

0=0.12.1V

SG

Switching Time Test Circuit

VDD=10V

V

4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

G

ID=10A
RL=1Ω

D

V

OUT

tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS062sn
tiucriCtseTdeificepseeS062sn
tiucriCtseTdeificepseeS082sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A01=57Cn
A01=01Cn
A01=21Cn

tinU

P.G

10

9

8.0V

8

6.0V

7

–A

6

D

5

4

3

Drain Current, I

2

1
0

0 0.1 0.2 0.3 0.4 0.5

2.5V

4.0V

50Ω

I

2.0V

3.0V

D

-- V

DS

FSS207

S

Drain-to-Source Voltage, VDS–V

–mΩ

DS(on)

40

35

30

25

20

15

2A

RDS(on) -- V

ID=10A

GS

VGS=1.5V

IT01469

Ta=25°C

I

-- V

20

VDS=10V

18

16

14

–A

D

12

10

8

6

Drain Current, I

4

2
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

D

GS

°C

Ta=75

°C

--25

Gate-to-Source Voltage, VGS–V

RDS(on) -- Ta

=2.5V

GS

=2A, V

I

D

=4.0V

GS

=10A, V

I

D

–mΩ

DS(on)

25

20

15

10

°C

25

IT01470

10

5

Static Drain-to-Source

On-State Resistance, R

0

012345678910

Gate-to-Source Voltage, V

GS

–V

IT01471

5

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 4020 60 80 100 160140120

Ambient Temperature, Ta – ˚C

IT01472

No.6346-2/4