Sanyo FSS140 Specifications
Ordering number : ENN6787
FSS140
P-Channel Silicon MOSFET
FSS140
Load Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4.0V drive.
Package Dimensions
unit : mm
2116
[FSS140]
58
4.4
14
5.0
1.8max
1.5
0.595
1.27
0.43
0.1
0.3
6.0
1 : Source
2 : Source
3 : Source
4 : Gate
0.2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --48 A
Mounted on a ceramic board (1200mm2✕0.8mm) 1.8 W
--30 V
±20 V
--5 A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance |yfs| VDS=--10V, ID=--5A 5.3 7.5 S
Marking : S140 Continued on next page.
(BR)DSSID
DSS
GSS
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1500 TS IM TA-2942
No.6787-1/4
FSS140
Continued from preceding page.
Parameter Symbol Conditions
RDS(on)1 ID=--5A, VGS=--10V 45 59 mΩ
Static Drain-to-Source On-State Resistance RDS(on)2 ID=--4A, VGS=--4.5V 75 105 mΩ
RDS(on)3 ID=--4A, VGS=--4V 80 112 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 250 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 160 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 52 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 19 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A 4 nC
Diode Forward Voltage V
SD
See specified Test Circuit 80 ns
r
See specified Test Circuit 41 ns
f
IS=--5A, VGS=0 --0.83 --1.5 V
min typ max
Ratings
Unit
Switching Time Test Circuit
V
IN
0V
--10V
V
PW=10µs
D.C.≤1%
P.G
--6
--5
--6.0V
--8.0V
--4
-- A
D
--3
--2
--10.0V
Drain Current, I
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source V oltage, VDS -- V
140
120
IN
I
D
--4.5V
--4.0V
--3.0V
RDS(on) -- V
50Ω
-- V
G
DS
VDD= --15V
ID= --5A
RL=3.0Ω
D
S
V
GS
GS
V
FSS140
= --2.5V
IT02537
Ta=25°C
OUT
I
-- V
--8
VDS= --10V
--7
--6
-- A
--5
D
--4
--3
Drain Current, I
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --3.5--2.5 --3.0
D
GS
25°C
Ta=75°C
Gate-to-Source V oltage, VGS -- V
140
120
RDS(on) -- Ta
--25°C
IT02538
100
(on) -- mΩ
ID= --4A
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
0 --4 --8 --12 --16 --20--2 --6 --10 --14 --18
--5A
Gate-to-Source V oltage, VGS -- V
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
IT02539 IT02540
= --4A, V
I
D
= --4A, V
I
D
= --5A, V
I
D
Ambient Temperature, Ta -- °C
= --4.0V
GS
GS
= --10.0V
GS
= --4.5V
No.6787-2/4
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