Sanyo FSS140 Specifications

Ordering number : ENN6787

FSS140

P-Channel Silicon MOSFET

FSS140

Load Switching Applications

Features

Package Dimensions

•Low ON-resistance.

•Ultrahigh-speed switching.

•4.0V drive.

unit : mm

2116

[FSS140]

8

5

4.4

1		4
	5.0	1.8max
		1.5

0.595	1.27	0.43	0.1

0.3
6.0
	1	: Source
	2	: Source
	3	: Source
0.2	4	: Gate
	5	: Drain
	6	: Drain
	7	: Drain
	8	: Drain

SANYO : SOP8

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter	Symbol	Conditions			Ratings		Unit
Drain-to-Source Voltage	VDSS				--30		V
Gate-to-Source Voltage	VGSS				±20		V
Drain Current (DC)	ID				--5		A
Drain Current (Pulse)	IDP	PW≤10μs, duty cycle≤1%			--48		A
Allowable Power Dissipation	PD	Mounted on a ceramic board (1200mm2 0.8mm)			1.8		W
Channel Temperature	Tch				150		°C
Storage Temperature	Tstg				--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions		Ratings			Unit
			min	typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--30				V
Zero-Gate Voltage Drain Current	IDSS	VDS=--30V, VGS=0				--1	μA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0				±10	μA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA	--1.0			--2.4	V
Forward Transfer Admittance	|yfs|	VDS=--10V, ID=--5A	5.3		7.5		S
Marking : S140					Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1500 TS IM TA-2942 No.6787-1/4

FSS140

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
	RDS(on)1	ID=--5A, VGS=--10V		45	59	mW
Static Drain-to-Source On-State Resistance	RDS(on)2	ID=--4A, VGS=--4.5V		75	105	mW
	RDS(on)3	ID=--4A, VGS=--4V		80	112	mW
Input Capacitance	Ciss	VDS=--10V, f=1MHz		1000		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz		250		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz		160		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		10		ns
Rise Time	tr	See specified Test Circuit		80		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		52		ns
Fall Time	tf	See specified Test Circuit		41		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--10V, ID=--5A		19		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--10V, ID=--5A		2		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--10V, ID=--5A		4		nC
Diode Forward Voltage	VSD	IS=--5A, VGS=0		--0.83	--1.5	V

Switching Time Test Circuit

	VDD= --15V
VIN
0V			ID= --5A
--10V			RL=3.0Ω
VIN	D		VOUT
PW=10µs
D.C.≤ 1%
	G
P.G	50Ω
			FSS140
		S

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

--6													ID -- VDS
					6	0V							5V
					.							.				. 0V
				--						--	4
--5															4
					.									--
					8
				--
--4					0V									.0V
														3
				.									--
				10
				--
--3
																			V	GS	=		--2.5V
--2
--1
0
	0 --0.1					--0.2 --0.3 --0.4 --0.5 --0.6 --0.7														--0.8			--0.9 --1.0
							Drain-to-Source Voltage, VDS -- V																IT02537
140									RDS(on) -- VGS
																						Ta=25°C
120
100
								--5A
80			ID= --4A
60

40

20

0

0	--2	--4	--6	--8 --10 --12 --14	--16	--18 --20
		Gate-to-Source Voltage, VGS			-- V	IT02539

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

--8												ID -- VGS
	VDS= --				10V
--7
--6
--5
--4
																							C
--3																				25	°
--2																			Ta=75			°		C		°C
--1																									--	25
0
0		--0.5					--1.0						--1.5				--2.0								--2.5			--3.0				--3.5
						Gate-to-Source Voltage, VGS																					-- V			IT02538
140										RDS(on)								-- Ta
120
																							.0V
																				4
																			--
100																	=
																VGS								.5V
														4A,								4
												--							=
									ID		=						VGS
80															4A,
												=		--
										ID
60																								.0V
																	= --10
									I	= --5A,						VGS
40									D
20
0
--60		--40 --20					0			20 40							60				80				100			120		140		160
							Ambient Temperature, Ta --																				°C			IT02540

No.6787-2/4