SANYO FSS139 Datasheet
Ordering number : ENN7019
FSS139
P-Channel Silicon MOSFET
FSS139
Load Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2116
[FSS139]
58
4.4
0.3
6.0
1 : Source
2 : Source
Specifications
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --48 A
Mounted on a ceramic board (1200mm2✕0.8mm) 1.8 W
--20 V
±10 V
--4 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--4A 6.3 9 S
Marking : S139 Contin ued on ne xt page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73001 TS IM T A-2723
No.7019-1/4
FSS139
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 190 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 52 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 23 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 1.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 2.3 nC
Diode Forward Voltage V
RDS(on) 1 ID=--4A, VGS=--4V 60 78 mΩ
RDS(on) 2 ID=--2A, VGS=--2.5V 78 110 mΩ
See specified Test Circuit 200 ns
r
See specified Test Circuit 78 ns
f
SD
IS=--4A, VGS=0 --0.89 --1.5 V
Ratings
min typ max
Unit
Switching Time Test Circuit
V
IN
0V
--4V
V
PW=10µs
D.C.≤1%
P.G
I
--6
--5
--4
-- A
D
--3
--2
Drain Current, I
--1
0
0
160
140
--2.5V
--3.0V
--4.0V
--0.2--0.1 --0.3 --0.4 --0.6--0.5 --0.8 --0.9 --1.0
Drain-to-Source V oltage, VDS -- V
D
--2.0V
RDS(on) -- V
IN
-- V
G
50Ω
DS
VDD= --10V
D
VGS= --1.5V
--0.7
GS
ID= --4A
RL=2.5Ω
S
Ta=25°C
V
FSS139
IT02298
OUT
--6
VDS=10V
--5
--4
-- A
D
--3
--2
Drain Current, I
--1
0
0
--0.2 --0.6 --1.6--1.0--0.8
160
140
I
-- V
D
GS
25°C
--25°C
Ta=75°C
--0.4 --1.4--1.2 --2.0--1.8
Gate-to-Source V oltage, VGS -- V
IT02299
RDS(on) -- Ta
120
ID= --2A
(on) -- mΩ
100
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--4A
--2 --40 --6 --10--8
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
IT02300 IT02301
120
(on) -- mΩ
100
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--40 --20--60
I
0
= --2A, V
D
= --4A, V
I
D
GS
GS
= --2.5V
= --4.0V
160120 14010060 804020
No.7019-2/4
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