SANYO FSS138 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6400
FSS138
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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)CD(tnerruCniarDI
)eslup(tnerruCniarDI
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erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : S138
D
D
SG
R
SD
R
SD
R
SD
Package Dimensions
unit:mm
2116
[FSS138]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %125–A
PD
Mounted on a ceramic board (1200mm2×0.8mm)
SSD)RB(
SSD
SSG
)ffo(VSDI,V01–=
1)no(IDV,A11–=
2)no(IDV,A4–=
3)no(IDV,A4–=
I
D
V
V
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
0=1–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–4.2–V
D
A11–=7152S
D
V01–=1151mΩ
SG
V5.4–=5112mΩ
SG
V4–=6132mΩ
SG
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
03–V
02±V
11–A
0.2W
˚C
˚C
tinU
30300TS (KOTO) TA-2506 No.6400-1/4
FSS138
Continued from preceding page.
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emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
VDD=--15V
V
IN
0V
--10V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=--11A
RL=1.36Ω
V
OUT
zHM1=f,V01–=0073Fp
zHM1=f,V01–=048Fp
zHM1=f,V01–=044Fp
tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS562sn
tiucriCtseTdeificepseeS042sn
tiucriCtseTdeificepseeS561sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,A11–=
0=97.0– 5.1– V
SG
nimpytxam
A11–=57Cn
D
A11–=01Cn
D
A11–=21Cn
D
sgnitaR
tinU
P.G
--10
--9
--8
--7
– A
--6
D
--5
--4
--3
Drain Current, I
--2
--1
--6.0V
--4.5V
--10.0V
0
0 --0.2--0.1 --0.4--0.3 --0.5
50Ω
--3.0V
I
D
--3.5V
--4.0V
-- V
DS
FSS138
S
Drain-to-Source Voltage, VDS– V
50
40
– mΩ
(on)
30
DS
ID=--4A
20
10
Static Drain-to-Source
On-State Resistance, R
0
0 --10--2 --8 --14--4 --12--6 --16 --18 --20
RDS(on) -- V
--11A
Gate-to-Source Voltage, V
GS
GS
– V
--2.5V
VGS=--2.0V
IT00414
Ta=25°C
IT00416
I
-- V
--18
VDS=--10V
--16
--14
--12
– A
D
--10
--8
--6
Drain Current, I
--4
--2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
D
GS
Ta=75°C
--25°C
Gate-to-Source Voltage, VGS– V
40
35
30
– mΩ
25
(on)
DS
20
15
10
5
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
=--4A
=--4.5V, I
V
GS
=--10.0V, I
D
=--11A
D
V
GS
V
GS
=--4.0V, I
=--4A
D
Ambient Temperature, Ta –˚C
25°C
IT00415
IT00417
No.6400-2/4
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