SANYO FSS134 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6399
FSS134
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : S134
D
D
SG
R
SD
R
SD
R
SD
Package Dimensions
unit:mm
2116
[FSS134]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %125–A
PD
Mounted on a ceramic board (1000mm2×0.8mm)
SSD)RB(
SSD
SSG
)ffo(VSDI,V01–=
1)no(IDV,A9–=
2)no(IDV,A4–=
3)no(IDV,A4–=
I
D
V
V
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
0=1–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–4.2–V
D
A9–=1171S
D
V01–=6112mΩ
SG
V5.4–=4243mΩ
SG
V4–=6273mΩ
SG
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
03–V
02±V
9–A
0.2W
˚C
˚C
tinU
30300TS (KOTO) TA-2274 No.6399-1/4
FSS134
Continued from preceding page.
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ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A9–=
S
Switching Time Test Circuit
VDD=--15V
V
IN
0V
--10V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=--9A
RL=1.67Ω
V
OUT
zHM1=f,V01–=0032Fp
zHM1=f,V01–=025Fp
zHM1=f,V01–=023Fp
tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS022sn
tiucriCtseTdeificepseeS061sn
tiucriCtseTdeificepseeS031sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=8.0–5.1–V
SG
sgnitaR
nimpytxam
A9–=54Cn
D
A9–=6Cn
D
A9–=7Cn
D
tinU
S
--3.5V
FSS134
--3.0V
P.G
--10
--9
--8
--7
–A
--6
D
--5
--4
--3
Drain Current, I
--2
--1
0
0 --0.2--0.1 --0.4--0.3 --0.5
=--10.0V
GS
V
50Ω
I
--6.0V
D
--4.5V
-- V
--4.0V
DS
Drain-to-Source Voltage, VDS–V
50
RDS(on) -- V
GS
--9A
40
–mΩ
ID=--4A
(on)
30
DS
20
10
Static Drain-to-Source
On-State Resistance, R
0
0 --10--2 --8 --14--4 --12--6 --16 --18 --20
Gate-to-Source Voltage, V
GS
–V
--2.5V
--2.0V
IT00403
Ta=25°C
IT00405
I
-- V
D
--16
--14
--12
–A
--10
D
--8
--6
Drain Current, I
--4
--2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0
GS
°C
Ta=75
--25°C
Gate-to-Source Voltage, VGS–V
60
50
–mΩ
40
(on)
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
=- -4A, V
I
D
=- -4A, V
I
D
=- -9A, V
I
D
GS
GS
GS
=- -4.0V
=- -4.5V
=- -10.0V
Ambient Temperature, Ta – ˚C
VDS=--10V
25°C
IT00404
IT00406
No.6399-2/4
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