Sanyo FSS133 Specifications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6919
FSS133
P-Channel Silicon MOSFET
FSS133
Load Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2116
[FSS133]
58
4.4
0.3
6.0
1 : Source
2 : Source
3 : Source
4 : Gate
0.2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
Specifications
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --52 A
Mounted on a ceramic board (1200mm2✕0.8mm) 1.8 W
--20 V
±10 V
--8 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--8A, VGS=--4V 18 24 mΩ
RDS(on)2 ID=--2A, VGS=--2.5V 25 35 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--8A 14.7 21 S
min typ max
Marking : S133 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
22001 TS IM TA-2721
No.6919-1/4
FSS133
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 2900 pF
Output Capacitance Coss VDS=--10V, f=1MHz 570 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 370 pF
Turn-ON Delay Time td(on) See specified Test Circuit 27 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 130 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--8A 65 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--8A 4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--8A 8 nC
Diode Forward Voltage V
SD
See specified Test Circuit 250 ns
r
See specified Test Circuit 180 ns
f
IS=--8A, VGS=0 --0.8 --1.5 V
min typ max
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --8A
RL=1.25Ω
V
OUT
Ratings
Unit
P.G
--10
--9
--8
--7
-- A
D
--6
--5
--4
--3
Drain Current, I
--2
--1
0
--6.0V
--10.0V
0 --0.2--0.1 --0.4 --0.5--0.3 --0.6
--3.0V
--4.0V
I
D
--2.5V
50Ω
-- V
S
DS
VGS= --1.0V
Drain-to-Source V oltage, VDS -- V
(on) -- mΩ
DS
50
40
30
20
RDS(on) -- V
--8A
ID= --2A
GS
FSS133
--1.5V
IT03066
Ta=25°C
I
-- V
D
--16
VDS= --10V
--14
--12
-- A
--10
D
--8
--6
Drain Current, I
--4
--2
0
0 --0.4--0.2 --0.6 --1.0--0.8 --1.2 --1.4 --1.6 --1.8 --2.0
GS
°C
Ta=75
--25°C
Gate-to-Source V oltage, VGS -- V
60
50
40
(on) -- mΩ
RDS(on) -- Ta
DS
30
20
= --2A, V
I
D
I
D
= --8A, V
GS
GS
= --2.5V
= --4.0V
25°C
IT03067
10
Static Drain-to-Source
On-State Resistance, R
0
0--4--2 --6 --8 --10
Gate-to-Source V oltage, VGS -- V
IT03068
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --20--40 0 4020 60 10080 120 140 160
Ambient Temperature, Ta -- °C
IT03069
No.6919-2/4
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