Sanyo FSS133 Specifications

Page 1
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6919
FSS133
P-Channel Silicon MOSFET
FSS133
Load Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Package Dimensions
unit : mm
2116
[FSS133]
58
4.4
0.3
6.0
1 : Source 2 : Source 3 : Source 4 : Gate
0.2
5 : Drain 6 : Drain 7 : Drain 8 : Drain
SANYO : SOP8
Specifications
14
5.0
1.27
0.595
0.43
1.8max
1.5
0.1
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% --52 A Mounted on a ceramic board (1200mm2✕0.8mm) 1.8 W
--20 V
±10 V
--8 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=--8A, VGS=--4V 18 24 m RDS(on)2 ID=--2A, VGS=--2.5V 25 35 m
=--1mA, VGS=0 --20 V VDS=--20V, VGS=0 --1 µA VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--8A 14.7 21 S
min typ max
Marking : S133 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
Unit
22001 TS IM TA-2721
No.6919-1/4
Page 2
FSS133
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 2900 pF Output Capacitance Coss VDS=--10V, f=1MHz 570 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 370 pF Turn-ON Delay Time td(on) See specified Test Circuit 27 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 130 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--8A 65 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--8A 4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--8A 8 nC Diode Forward Voltage V
SD
See specified Test Circuit 250 ns
r
See specified Test Circuit 180 ns
f
IS=--8A, VGS=0 --0.8 --1.5 V
min typ max
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs D.C.1%
V
IN
G
D
ID= --8A RL=1.25
V
OUT
Ratings
Unit
P.G
--10
--9
--8
--7
-- A D
--6
--5
--4
--3
Drain Current, I
--2
--1 0
--6.0V
--10.0V
0 --0.2--0.1 --0.4 --0.5--0.3 --0.6
--3.0V
--4.0V
I
D
--2.5V
50
-- V
S
DS
VGS= --1.0V
Drain-to-Source V oltage, VDS -- V
(on) -- m
DS
50
40
30
20
RDS(on) -- V
--8A
ID= --2A
GS
FSS133
--1.5V
IT03066
Ta=25°C
I
-- V
D
--16
VDS= --10V
--14
--12
-- A
--10
D
--8
--6
Drain Current, I
--4
--2
0
0 --0.4--0.2 --0.6 --1.0--0.8 --1.2 --1.4 --1.6 --1.8 --2.0
GS
°C
Ta=75
--25°C
Gate-to-Source V oltage, VGS -- V
60
50
40
(on) -- m
RDS(on) -- Ta
DS
30
20
= --2A, V
I
D
I
D
= --8A, V
GS
GS
= --2.5V
= --4.0V
25°C
IT03067
10
Static Drain-to-Source
On-State Resistance, R
0
0--4--2 --6 --8 --10
Gate-to-Source V oltage, VGS -- V
IT03068
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --20--40 0 4020 60 10080 120 140 160
Ambient Temperature, Ta -- °C
IT03069
No.6919-2/4
Page 3
100
yfs -- I
7 5
3 2
10
7 5
3 2
Ta= --25
75°C
D
VDS= --10V
°C
25°C
Forward Transfer Admittance, yfs -- S
1.0
--0.1 --1.0
Drain Current, I
10000
7 5
3 2
1000
7 5
Ciss, Coss, Crss -- pF
3 2
100
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Ciss, Coss, Crss -- V
Drain-to-Source V oltage, V
1000
7 5
3 2
100
7 5
3
Switching Time, SW Time -- ns
2
10
--0.1 --1.0 --10
SW Time -- I
t
f
Drain Current, I
2.5
P
23 5723 57 2
-- A
D
DS
Ciss
Coss
Crss
-- V
DS
D
t
stg
t
r
t
d
23 5723 57
-- A
D
-- Ta
D
VDD= --10V VGS= --4V
--10
IT03070
f=1MHz
IT03072
IT03074
FSS133
I
-- V
Ta=75°C
25°C
F
--25°C
--100 7 5
3 2
--10 7 5
3
-- A
2
F
--1.0 7 5
3 2
--0.1 7 5
3 2
Forward Current, I
--0.01 7 5 3 2
--0.001 0 --0.2 --0.4 --0.6 --1.2--1.0--0.8
Diode Forward V oltage, V
--10
--9
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1 0
0
VDS= --10V ID= --8A
VGS -- Qg
20 25 30 35 4051015 6545 50 55 60
Total Gate Charge, Qg -- nC
--100
IDP= --52A
7 5
3 2
ID= --8A
--10 7 5
-- A
3
D
2
--1.0 7
Operation in this
5
area is limited by RDS(on).
3 2
Drain Current, I
--0.1 7 5
Ta=25°C
3
Single pulse
2
Mounted on a ceramic board (1200mm2✕0.8mm)
--0.01
--0.01 --0.1 --1.0
A S O
DC operation
Drain-to-Source V oltage, V
SD
-- V
SD
<10µs
1ms
10ms
100ms
--10 --100
-- V
DS
VGS=0
IT03071
IT03073
100µs
23 5723 5723 5723 57
IT03075
2.0
-- W D
1.8
1.5
1.0
0.5
Mounted on a ceramic board(1200mm
2
0.8mm)
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Amibient Tamperature, Ta -- °C
IT03076
No.6919-3/4
Page 4
FSS133
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.
No.6919-4/4
PS
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