Sanyo FSS133 Specifications
FSS133
No.6919-1/4
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6919
FSS133
Package Dimensions
unit : mm
2116
[FSS133]
22001 TS IM TA-2721
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
14
58
4.4
0.3
6.0
0.2
5.0
0.595
1.27
1.5
0.1
1.8max
0.43
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
--20 V
Gate-to-Source Voltage V
GSS
±10 V
Drain Current (DC) I
D
--8 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% --52 A
Allowable Power Dissipation P
D
Mounted on a ceramic board (1200mm
2
✕0.8mm) 1.8 W
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
Electrical Characteristics at T a=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=--1mA, V
GS
=0 --20 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=--20V, V
GS
=0 --1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=±8V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=--10V, I
D
=--1mA --0.4 --1.4 V
Forward Transfer Admittance
yfs
V
DS
=--10V, I
D
=--8A 14.7 21 S
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=--8A, V
GS
=--4V 18 24 mΩ
R
DS
(on)2 I
D
=--2A, V
GS
=--2.5V 25 35 mΩ
Marking : S133 Continued on next page.
FSS133
No.6919-2/4
Continued from preceding page.
Ratings
Parameter Symbol Conditions
min typ max
Unit
Input Capacitance Ciss V
DS
=--10V, f=1MHz 2900 pF
Output Capacitance Coss V
DS
=--10V, f=1MHz 570 pF
Reverse Transfer Capacitance Crss V
DS
=--10V, f=1MHz 370 pF
Turn-ON Delay Time t
d
(on) See specified Test Circuit 27 ns
Rise Time t
r
See specified Test Circuit 250 ns
Turn-OFF Delay Time t
d
(off) See specified Test Circuit 130 ns
Fall Time t
f
See specified Test Circuit 180 ns
Total Gate Charge Qg V
DS
=--10V, V
GS
=--10V, I
D
=--8A 65 nC
Gate-to-Source Charge Qgs V
DS
=--10V, V
GS
=--10V, I
D
=--8A 4 nC
Gate-to-Drain “Miller” Charge Qgd V
DS
=--10V, V
GS
=--10V, I
D
=--8A 8 nC
Diode Forward Voltage V
SD
I
S
=--8A, V
GS
=0 --0.8 --1.5 V
Switching Time Test Circuit
PW=10µs
D.C.≤1%
0V
--4V
V
IN
P.G
50Ω
G
S
FSS133
I
D
= --8A
R
L
=1.25Ω
V
DD
= --10V
V
OUT
V
IN
D
Ta=75
°C
25°C
--25°C
60
40
50
30
20
10
0
R
DS
(on) -- Ta
I
D
= --2A, V
GS
= --2.5V
I
D
= --8A, V
GS
= --4.0V
50
40
30
20
10
0
0--4--2 --6 --8 --10
R
DS
(on) -- V
GS
I
D
= --2A
--16
--12
--14
--10
--8
--4
--6
--2
0
0 --0.4--0.2 --0.6 --1.0--0.8 --1.2 --1.4 --1.6 --1.8 --2.0
--60 --20--40 0 4020 60 10080 120 140 160
I
D
-- V
GS
V
DS
= --10V
--10
--6
--7
--8
--9
--5
--4
--3
--2
--1
0
0 --0.2--0.1 --0.4 --0.5--0.3 --0.6
I
D
-- V
DS
--10.0V
--2.5V
--1.5V
--3.0V
V
GS
= --1.0V
--6.0V
--4.0V
IT03066
IT03068
IT03067
IT03069
Ta=25°C
--8A
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Gate-to-Source V oltage, V
GS
-- V
Drain-to-Source V oltage, V
DS
-- V
Drain Current, I
D
-- A
Gate-to-Source V oltage, V
GS
-- V
Drain Current, I
D
-- A
Ambient Temperature, Ta -- °C
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