Sanyo FSS133 Specifications

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Page 1

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6919

FSS133

P-Channel Silicon MOSFET

FSS133

Load Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2116

[FSS133]

4.4

0.3

6.0

1 : Source 2 : Source 3 : Source 4 : Gate

0.2

5 : Drain 6 : Drain 7 : Drain 8 : Drain

SANYO : SOP8

Specifications

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C

DSS GSS

PW≤10µs, duty cycle≤1% --52 A Mounted on a ceramic board (1200mm2✕0.8mm) 1.8 W

--20 V

±10 V

--8 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=--8A, VGS=--4V 18 24 mΩ RDS(on)2 ID=--2A, VGS=--2.5V 25 35 mΩ

=--1mA, VGS=0 --20 V VDS=--20V, VGS=0 --1 µA VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--8A 14.7 21 S

min typ max

Marking : S133 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

Unit

22001 TS IM TA-2721

No.6919-1/4

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FSS133

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=--10V, f=1MHz 2900 pF Output Capacitance Coss VDS=--10V, f=1MHz 570 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 370 pF Turn-ON Delay Time td(on) See specified Test Circuit 27 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 130 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--8A 65 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--8A 4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--8A 8 nC Diode Forward Voltage V

See specified Test Circuit 250 ns

See specified Test Circuit 180 ns

IS=--8A, VGS=0 --0.8 --1.5 V

min typ max

Switching Time Test Circuit

VDD= --10V

--4V

PW=10µs D.C.≤1%

ID= --8A RL=1.25Ω

OUT

Ratings

Unit

P.G

--10

--9

--8

--7

-- A D

--6

--5

--4

--3

Drain Current, I

--2

--1 0

--6.0V

--10.0V

0 --0.2--0.1 --0.4 --0.5--0.3 --0.6

--3.0V

--4.0V

--2.5V

50Ω

-- V

VGS= --1.0V

Drain-to-Source V oltage, VDS -- V

(on) -- mΩ

RDS(on) -- V

--8A

ID= --2A

FSS133

--1.5V

IT03066

Ta=25°C

-- V

--16

VDS= --10V

--14

--12

-- A

--10

--8

--6

Drain Current, I

--4

--2

0 --0.4--0.2 --0.6 --1.0--0.8 --1.2 --1.4 --1.6 --1.8 --2.0

°C

Ta=75

--25°C

Gate-to-Source V oltage, VGS -- V

(on) -- mΩ

RDS(on) -- Ta

= --2A, V

= --8A, V

= --2.5V

= --4.0V

25°C

IT03067

Static Drain-to-Source

On-State Resistance, R

0--4--2 --6 --8 --10

Gate-to-Source V oltage, VGS -- V

IT03068

Static Drain-to-Source

On-State Resistance, R

--60 --20--40 0 4020 60 10080 120 140 160

Ambient Temperature, Ta -- °C

IT03069

No.6919-2/4

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100

yfs -- I

7 5

3 2

7 5

3 2

Ta= --25

75°C

VDS= --10V

°C

25°C

Forward Transfer Admittance, yfs -- S

1.0

--0.1 --1.0

Drain Current, I

10000

7 5

3 2

1000

7 5

Ciss, Coss, Crss -- pF

3 2

100

0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

1000

7 5

3 2

100

7 5

Switching Time, SW Time -- ns

--0.1 --1.0 --10

SW Time -- I

Drain Current, I

2.5

23 5723 57 2

-- A

Ciss

Coss

Crss

-- V

stg

23 5723 57

-- A

-- Ta

VDD= --10V VGS= --4V

--10

IT03070

f=1MHz

IT03072

IT03074

FSS133

-- V

Ta=75°C

25°C

--25°C

--100 7 5

3 2

--10 7 5

-- A

--1.0 7 5

3 2

--0.1 7 5

3 2

Forward Current, I

--0.01 7 5 3 2

--0.001 0 --0.2 --0.4 --0.6 --1.2--1.0--0.8

Diode Forward V oltage, V

--10

--9

--8

-- V

--7

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1 0

VDS= --10V ID= --8A

VGS -- Qg

20 25 30 35 4051015 6545 50 55 60

Total Gate Charge, Qg -- nC

--100

IDP= --52A

7 5

3 2

ID= --8A

--10 7 5

-- A

--1.0 7

Operation in this

area is limited by RDS(on).

3 2

Drain Current, I

--0.1 7 5

Ta=25°C

Single pulse

Mounted on a ceramic board (1200mm2✕0.8mm)

--0.01

--0.01 --0.1 --1.0

A S O

DC operation

Drain-to-Source V oltage, V

-- V

<10µs

1ms

10ms

100ms

--10 --100

-- V

VGS=0

IT03071

IT03073

100µs

23 5723 5723 5723 57

IT03075

2.0

-- W D

1.8

1.5

1.0

0.5

Mounted on a ceramic board(1200mm

✕0.8mm)

Allowable Power Dissipation, P

0 20 40 60 80 100 120 140 160

Amibient Tamperature, Ta -- °C

IT03076

No.6919-3/4

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FSS133

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.

No.6919-4/4