SANYO FSS132 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6398
FSS132
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
Marking : S132
D
D
SG
R
SD
R
SD
R
SD
Package Dimensions
unit:mm
2116
[FSS132]
58
0.3
4.4
14
5.0
1.8max
1.5
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %184–A
PD
Mounted on a ceramic board (1200mm2×0.8mm)
SSD)RB(
SSD
SSG
)ffo(VSDI,V01–=
1)no(IDV,A7–=
2)no(IDV,A4–=
3)no(IDV,A4–=
I
D
V
V
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
0=1–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–4.2–V
D
A7–=4.821S
D
V01–=2292mΩ
SG
V5.4–=4384mΩ
SG
V4–=8345mΩ
SG
0.43
0.1
nimpytxam
6.0
1 : Source
2 : Source
3 : Source
0.2
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
sgnitaR
Continued on next page.
03–V
02±V
7–A
8.1W
˚C
˚C
tinU
60100TS (KOTO) TA-2720 No.6398-1/4
FSS132
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A7–=
S
Switching Time Test Circuit
VDD=--15V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID=--7A
RL=2.1Ω
V
OUT
zHM1=f,V01–=0071Fp
zHM1=f,V01–=083Fp
zHM1=f,V01–=042Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS58sn
tiucriCtseTdeificepseeS09sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=28.0–5.1–V
SG
sgnitaR
nimpytxam
A7–=23Cn
D
A7–=5.4Cn
D
A7–=5Cn
D
tinU
P.G
--10
--9
--8
--7
–A
D
--6
--5
--4
--3
Drain Current, I
--2
--1
0
80
70
--10.0V
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS–V
50Ω
I
-- V
D
--4.5V
--6.0V
--4.0V
--3.5V
RDS(on) -- V
DS
S
FSS132
VGS=--2.5V
GS
Ta=25°C
--3.0V
IT01577
--12
--10
--8
–A
D
--6
--4
D
VDS=-10V
GS
I
-- V
Drain Current, I
--2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.5--3.0
80
70
Gate-to-Source Voltage, VGS–V
RDS(on) -- Ta
Ta=75°C
--25°C
25°C
IT01578
60
–mΩ
ID=--4A
50
(on)
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
--7A
Gate-to-Source Voltage, V
GS
–V
IT01579
60
–mΩ
50
(on)
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 160140
=- -4A, V
I
D
I
D
I
=- -4A, V
=- -7A, V
D
Ambient Temperature, Ta – ˚C
GS
=- -4.0V
GS
GS
=- -4.5V
=- -10.0V
IT01580
No.6398-2/4
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